MOSFET N-CH 100V 21A TO-220AB
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Parameter | Symbol | Values | Unit |
Continuous drain current TC = 25 |
ID | 21 | A |
Pulsed drain current TC = 25 |
IDpuls | 84 | |
Avalanche current,limited by Tjmax | IAR | 21 | |
Avalanche energy,periodic limited by Tjmax |
EAR | 11 | mJ |
Avalanche energy, single pulse ID = 21 A, VDD = 25 V, RGS = 25 L = 340 H, Tj = 25 |
EAS | 100 | |
Gate source voltage | VGS | ± 20 | V |
Power dissipation TC = 25 |
Ptot | 75 | W |
Operating temperature | Tj | -55 ... + 150 | |
Storage temperature | Tstg | -55 ... + 150 | |
Thermal resistance, chip case | RthJC | 1.67 | K/W |
Thermal resistance, chip to ambient | RthJC | 75 | |
DIN humidity category, DIN 40 040 | E | ||
IEC climatic category, DIN IEC 68-1 | 55 / 150 / 56 |
Technical/Catalog Information | BUZ21 |
Vendor | Infineon Technologies |
Category | Discrete Semiconductor Products |
Mounting Type | Through Hole |
FET Polarity | N-Channel |
Drain to Source Voltage (Vdss) | 100V |
Current - Continuous Drain (Id) @ 25° C | 21A |
Rds On (Max) @ Id, Vgs | 85 mOhm @ 13A, 10V |
Input Capacitance (Ciss) @ Vds | 1300pF @ 25V |
Power - Max | 75W |
Packaging | Tube |
Gate Charge (Qg) @ Vgs | - |
Package / Case | TO-220AB |
FET Feature | Standard |
Lead Free Status | Request Inventory Verification |
RoHS Status | Request Inventory Verification |
Other Names | BUZ21 BUZ21 BUZ21IN ND BUZ21INND BUZ21IN |