Transistors Bipolar (BJT) NPN High Volt Power
BUX98C: Transistors Bipolar (BJT) NPN High Volt Power
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Transistor Polarity : | NPN | Collector- Emitter Voltage VCEO Max : | 700 V |
Emitter- Base Voltage VEBO : | 7 V | Maximum DC Collector Current : | 30 A |
Configuration : | Single | Maximum Operating Temperature : | + 150 C |
Mounting Style : | Through Hole | Package / Case : | TO-3 |
Packaging : | Tube |
Symbol | Parameter | Value | Unit |
VCER | Collector Emitter Voltage(RBE 0) | 1200 | V |
VCEX | Collector Emitter Voltage (VBE = 0) | 1200 | V |
VCEO | Collector Emitter Voltage | 700 | V |
VEBO | Emitter Base Voltage(Ic = 0) | 7 | V |
IC | Collector Current | 30 | A |
ICM | Collector Peak Current(tp <5 ms) | 60 | A |
ICMP | Collector Peak Current non Repetitive | 80 | A |
IB | Base Current | 8 | A |
IBM | Base Peak Current(tp <5 ms) | 30 | A |
Ptot | Total Power Dissipation at Tc 25 | 250 | W |
Tstg | Storage Temperature | -65 to 200 | |
Tj | Max. Operating Junction Temperature | 200 |
The BUX98C is a Silicon Multi Epitaxial Mesa NPN transistor in Jedec TO-3 metal case, intended for use in switching and industrial applications from single and three-phase mains operations.