Specifications VCER Collector Emitter Voltage(RBE 10) 850 1000 VCES Collector Emitter Voltage (VBE = 0) 850 1000 VCEO Collector Emitter Voltage 400 450 VEBO Emitter Base Voltage(Ic = 0) 7V IC Collector Current 30A ICM Collector Peak Current(tp =5 ms) 60A I...
BUX98: Specifications VCER Collector Emitter Voltage(RBE 10) 850 1000 VCES Collector Emitter Voltage (VBE = 0) 850 1000 VCEO Collector Emitter Voltage 400 450 VEBO Emitter Base ...
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VCER | Collector Emitter Voltage(RBE 10) | 850 | 1000 |
VCES | Collector Emitter Voltage (VBE = 0) | 850 | 1000 |
VCEO | Collector Emitter Voltage | 400 | 450 |
VEBO | Emitter Base Voltage(Ic = 0) | 7V | |
IC | Collector Current | 30A | |
ICM | Collector Peak Current(tp =5 ms) | 60A | |
ICP | Collector Peak Current non Rep (tp = 20s) | 80A | |
IB | Base Current | 8A | |
IBM | Base Peak Current(tp=5 ms) | 30A | |
Ptot | Total Power Dissipation at Tcase < 25 | 250W | |
Tstg | Storage Temperature | -65 to 150 | |
Tj | Junction Temperature | 200 |
The BUX98 and BUX98A are silicon multiepitaxial mesa NPN transistors in JEDEC TO-3 metal-case intended and industrial applications from single and three-phase mains operation.