Transistors Bipolar (BJT) NPN High Volt Power LTB 9-2009
BUX98APW: Transistors Bipolar (BJT) NPN High Volt Power LTB 9-2009
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Transistor Polarity : | NPN | Collector- Emitter Voltage VCEO Max : | 450 V |
Emitter- Base Voltage VEBO : | 7 V | Maximum DC Collector Current : | 24 A |
Configuration : | Single | Maximum Operating Temperature : | + 150 C |
Mounting Style : | Through Hole | Package / Case : | TO-247 |
Packaging : | Tube |
Symbol |
Parameter |
Value |
Unit |
VCER |
Collector-Emitter Voltage (RBE = 10 |
1000 |
V |
VCES |
Collector-Base Voltage (VBE = 0) |
1000 |
V |
VCEO |
Collector-Emitter Voltage (IB = 0) |
450 |
V |
VEBO |
Emitter-Base Voltage (IC = 0) |
7 |
V |
IC |
Collector Current |
24 |
A |
ICM |
Collector Peak Current (tp < 5 ms) |
36 |
A |
IB |
Base Current |
5 |
A |
IBM |
Base Peak Current |
8 |
A |
Ptot |
Total Power Dissipation at Tcase < 25 |
200 |
W |
Tstg |
Storage Temperature |
-65 to 150 |
|
Tj |
Max. Operating Junction Temperature |
150 |
The BUX98APW is a silicon Multiepitaxial Mesa NPN transistor in TO-247 plastic package. It is intended for use in industrial applications from single and three-phase mains operation.
Technical/Catalog Information | BUX98APW |
Vendor | STMicroelectronics |
Category | Discrete Semiconductor Products |
Transistor Type | NPN |
Voltage - Collector Emitter Breakdown (Max) | 450V |
Current - Collector (Ic) (Max) | 24A |
Power - Max | 200W |
DC Current Gain (hFE) (Min) @ Ic, Vce | - |
Vce Saturation (Max) @ Ib, Ic | 1.2V @ 3.2A, 16A |
Frequency - Transition | - |
Current - Collector Cutoff (Max) | 2mA |
Mounting Type | Through Hole |
Package / Case | TO-247-3 |
Packaging | Tube |
Drawing Number | * |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | BUX98APW BUX98APW 497 2575 5 ND 49725755ND 497-2575-5 |