Transistors Bipolar (BJT) NPN Power Module
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Transistor Polarity : | NPN | Collector- Emitter Voltage VCEO Max : | 1000 V | ||
Emitter- Base Voltage VEBO : | 7 V | Maximum DC Collector Current : | 50 A | ||
DC Collector/Base Gain hfe Min : | 12 | Mounting Style : | Through Hole | ||
Package / Case : | ISOTOP | Packaging : | Tube |
Symbol | Parameter | Value | Unit |
VCEV | Collector-Emit ter Voltage (VBE = 5 V) | 1000 | V |
VCEO(sus) | Collector-Emitter Voltage (IB = 0) | 450 | V |
VEBO | Emitter-Base Voltage (IC = 0) | 7 | V |
IC | Collector Current | 50 | A |
ICM | Collector Peak Current(tp = 10 ms) | 75 | A |
IB | Base Current | 10 | A |
IBM | Base Peak Current | 16 | A |
Ptot | Total Dissipation at Tc= 25 | 250 | W |
Tstg | Storage Temperature | -55 to 150 | |
Tj | Max. Operating Junction Temperature | 150 | |
VISO | Insulation Withstand Voltage (AC-RMS) | 2500 | V |