Transistors Bipolar (BJT) NPN High Current
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Transistor Polarity : | NPN | Collector- Emitter Voltage VCEO Max : | 125 V | ||
Emitter- Base Voltage VEBO : | 7 V | Maximum DC Collector Current : | 50 A | ||
DC Collector/Base Gain hfe Min : | 20 | Configuration : | Single | ||
Maximum Operating Temperature : | + 150 C | Mounting Style : | Through Hole | ||
Package / Case : | TO-3 | Packaging : | Tube |
Rating | Symbol | BUV20 | BUV60 | Unit |
Collector-Emititer Voltage | VCEO(sus) | 125 | Vdc | |
Collector-Base Voltage | VCBO | 160 | 260 | Vdc |
Emitter-Base Voltage | VEBO | 7 | Vdc | |
Collector-Emitter Voltage(VBE=-1.5V) | VCEX | 160 | 260 | Vdc |
Collector-Emitter voltage(RBE=100) | VCER | 150 | 260 | Vdc |
Collector-Current-Continuous -Peak(PW10ms) |
IC ICM |
50 60 |
Adc Apk | |
Base-Current continuous | IB | 10 | Adc | |
Total Power Dissipation@TC=25 | PD | 250 | Watts | |
Operating and Storage Junction Temperature Range | TJ, Tstg | -65 to 200 |