BUV28

Transistors Bipolar (BJT) Silicon NPN Swtching Transistor

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BUV28 Picture
SeekIC No. : 00211452 Detail

BUV28: Transistors Bipolar (BJT) Silicon NPN Swtching Transistor

floor Price/Ceiling Price

Part Number:
BUV28
Mfg:
STMicroelectronics
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/11/21

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Product Details

Quick Details

Transistor Polarity : NPN Collector- Emitter Voltage VCEO Max : 200 V
Emitter- Base Voltage VEBO : 7 V Maximum DC Collector Current : 10 A
Configuration : Single Maximum Operating Temperature : + 150 C
Mounting Style : Through Hole Package / Case : TO-220
Packaging : Tube    

Description

Maximum Operating Frequency :
DC Collector/Base Gain hfe Min :
Transistor Polarity : NPN
Configuration : Single
Maximum Operating Temperature : + 150 C
Mounting Style : Through Hole
Packaging : Tube
Emitter- Base Voltage VEBO : 7 V
Package / Case : TO-220
Maximum DC Collector Current : 10 A
Collector- Emitter Voltage VCEO Max : 200 V


Application

·High frequency and efficiency converters
·Switching regulators
·Motor control





Specifications

SYMBOL PARAMETER CONDITIONS VALUE UNIT
VCBO Collector-base voltage Open emitter 400 V
VCBO Collector-emitter voltage Open base 200 V
VEBO Emitter-base voltage Open collector 7 V
IC Collector current 10 A
IB Base current 2 A
Ptot Total power dissipation TC=25 70 W
TJ Junction Temperature 150
Tstg Storage Temperature Range -65~150





Description

The BUV28 features are as follows:

·With TO-220C package
·Low collector saturation voltage
·Fast switching speed




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