Transistors Bipolar (BJT) Silicon NPN Swtching Transistor
BUV28: Transistors Bipolar (BJT) Silicon NPN Swtching Transistor
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Transistor Polarity : | NPN | Collector- Emitter Voltage VCEO Max : | 200 V |
Emitter- Base Voltage VEBO : | 7 V | Maximum DC Collector Current : | 10 A |
Configuration : | Single | Maximum Operating Temperature : | + 150 C |
Mounting Style : | Through Hole | Package / Case : | TO-220 |
Packaging : | Tube |
SYMBOL | PARAMETER | CONDITIONS | VALUE | UNIT |
VCBO | Collector-base voltage | Open emitter | 400 | V |
VCBO | Collector-emitter voltage | Open base | 200 | V |
VEBO | Emitter-base voltage | Open collector | 7 | V |
IC | Collector current | 10 | A | |
IB | Base current | 2 | A | |
Ptot | Total power dissipation | TC=25 | 70 | W |
TJ | Junction Temperature | 150 | ||
Tstg | Storage Temperature Range | -65~150 |
The BUV28 features are as follows:
·With TO-220C package
·Low collector saturation voltage
·Fast switching speed