BUV27

Transistors Bipolar (BJT) NPN Medium Power

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BUV27 Picture
SeekIC No. : 00210670 Detail

BUV27: Transistors Bipolar (BJT) NPN Medium Power

floor Price/Ceiling Price

Part Number:
BUV27
Mfg:
STMicroelectronics
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/12/21

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Product Details

Quick Details

Transistor Polarity : NPN Collector- Emitter Voltage VCEO Max : 120 V
Emitter- Base Voltage VEBO : 7 V Maximum DC Collector Current : 12 A
Configuration : Single Maximum Operating Temperature : + 150 C
Mounting Style : Through Hole Package / Case : TO-220AB
Packaging : Tube    

Description

Maximum Operating Frequency :
DC Collector/Base Gain hfe Min :
Transistor Polarity : NPN
Configuration : Single
Maximum Operating Temperature : + 150 C
Mounting Style : Through Hole
Maximum DC Collector Current : 12 A
Package / Case : TO-220AB
Packaging : Tube
Emitter- Base Voltage VEBO : 7 V
Collector- Emitter Voltage VCEO Max : 120 V


Features:

*SGS-THOMSON PREFERRED SALESTYPE
*NPN TRANSISTOR
*FAST SWITCHING SPEED
*LOW COLLECTOR EMITTER SATURATION





Application

*SWITCHING REGULATORS
*MOTOR CONTROL





Specifications

Symbol Parameter Value Unit
VCBO Collector-base Voltage (IE=0) 240 V
VCEO Collector-Emitter Voltage (IB=0) 120 V
VEBO Emitter-Base Voltage (IC=0) 7 V
IC

Emitter Current

12 A
ICM Collector Peak Current (tp<10ms) 20 A
IB Base Current 4 A
IBM Base Peak Current (tp<10ms) 6 A
Ptot Total Dissipation at TC<25 85 W
ptot Total Dissipation at TC<60 65 W
Tstg Storage Temperature -65 to + 175
Tj

Max. Operating Junction Temperature

175





Description

The BUV27 is a Multiepitaxial Planar NPN Transistor in TO-220 package. It is intended for use in high frequency and efficency converters, switching regulators and motor control.




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