BUV26G, US $ .4-.84 , ON Semiconductor, BUV26G DataSheet download, circuit diagram from SeekIC.com

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BUV26G: Transistors Bipolar (BJT) 20A 90V 85W NPN

BUV26G Data Sheet

US $ .4~.84 / Piece | Get Latest Price

Part Number:: BUV26G
Mfg:: ON Semiconductor
Supply Ability:: 5000

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Upload time: 2024/12/24

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Recent History
What is this?

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Transistors Bipolar (BJT) 40A 200V 250W NPN

Product Details

Quick Details

Transistor Polarity :	NPN	Collector- Emitter Voltage VCEO Max :	90 V
Emitter- Base Voltage VEBO :	7 V	Maximum DC Collector Current :	20 A
Configuration :	Single	Maximum Operating Temperature :	+ 175 C
Mounting Style :	Through Hole	Package / Case :	TO-220AB
Packaging :	Tube

Description

DC Collector/Base Gain hfe Min :
Maximum Operating Frequency :
Transistor Polarity : NPN
Configuration : Single
Mounting Style : Through Hole
Package / Case : TO-220AB
Packaging : Tube
Emitter- Base Voltage VEBO : 7 V
Maximum Operating Temperature : + 175 C
Collector- Emitter Voltage VCEO Max : 90 V
Maximum DC Collector Current : 20 A

Parameters:

Technical/Catalog Information	BUV26G
Vendor	ON Semiconductor
Category	Discrete Semiconductor Products
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	90V
Current - Collector (Ic) (Max)	20A
Power - Max	85W
DC Current Gain (hFE) (Min) @ Ic, Vce	-
Vce Saturation (Max) @ Ib, Ic	600mV @ 400mA, 6A
Frequency - Transition	-
Current - Collector Cutoff (Max)	3mA
Mounting Type	Through Hole
Package / Case	TO-220-3 (Straight Leads)
Packaging	Tube
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	BUV26G BUV26G

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BUV26G

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