Features: *Multi-Cbase for efficient energy distributio across the chip resulting in significantly improved switching and energy ratings across full temperature range.*Ion implant and high accuracy masking fo tight control of characteristics from batch batch.*Triple Guard Rings for improved contro...
BUL58BSMD: Features: *Multi-Cbase for efficient energy distributio across the chip resulting in significantly improved switching and energy ratings across full temperature range.*Ion implant and high accuracy ...
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VCBO | Collector -C Base Voltag | 180V |
VCEO | Collector -C Emitter Voltage (IB = 0) | 90V |
VEBO | Emitter -C Base Voltage (IC = 0) |
10V |
IC | Collector Current | 7A |
I C(PK) |
Peak Collector Current | 10A |
I B | Base Current | 2A |
Ptot | Total Dissipation at Tcase = 25 Derate above 25 when used on efficient heatsin |
50W 0.28W/ |
Tstg | Operating and Storage Temperature Range | -C65 to 200 |
The BUL58BSMD features are as follows:
*SEMEFAB DESIGNED AND DIFFUSED
*HIGH VOLTAGE
*FAST SWITCHING
*HIGH ENERGY RATING