BUL510

Transistors Bipolar (BJT) NPN Hi-Volt Fast Sw

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BUL510 Picture
SeekIC No. : 00204304 Detail

BUL510: Transistors Bipolar (BJT) NPN Hi-Volt Fast Sw

floor Price/Ceiling Price

US $ .85~1.03 / Piece | Get Latest Price
Part Number:
BUL510
Mfg:
STMicroelectronics
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~10
  • 10~100
  • 100~250
  • Unit Price
  • $1.03
  • $.98
  • $.89
  • $.85
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
View more price & deliveries
Total Cost: $ 0.00

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Month Sales

268 Transactions

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evaluate  (4.8 stars)

Upload time: 2024/12/21

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Product Details

Quick Details

Transistor Polarity : NPN Collector- Emitter Voltage VCEO Max : 450 V
Emitter- Base Voltage VEBO : 9 V Maximum DC Collector Current : 10 A
DC Collector/Base Gain hfe Min : 15 Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : Through Hole
Package / Case : TO-220AB Packaging : Tube    

Description

Maximum Operating Frequency :
Transistor Polarity : NPN
Configuration : Single
Maximum Operating Temperature : + 150 C
Mounting Style : Through Hole
Package / Case : TO-220AB
Packaging : Tube
DC Collector/Base Gain hfe Min : 15
Maximum DC Collector Current : 10 A
Emitter- Base Voltage VEBO : 9 V
Collector- Emitter Voltage VCEO Max : 450 V


Features:

*SGS-THOMSONPREFERREDSALESTYPE
*NPNTRANSISTOR
*HIGHVOLTAGECAPABILITY
*LOWSPREADOFDYNAMICPARAMETERS
*VERYHIGHSWITCHINGSPEED
*FULLYCHARACTERISEDAT125





Application

ELECTRONIC BALLASTSFOR FLUORESCENT LIGHTING
SWITCH MODE POWER SUPPLIES
ELECTRONIC TRANSFORMER FOR HALOGEN LAMP






Specifications

Symbol Parameter Value Unit
VCES Collector-Emitter Voltage (VBE= 0) 1000 V
VCEO Collector-Emitter Voltage (IB= 0)
450 V
VEBO Emitter-Base Voltage (IC = 0) 9 V
IC Collector Current 10 A
ICM Collector Peak Current (tP<5 ms) 18 A
IB Base Current 3.5 A
IBM Base Peak Current (tP<5 ms) 7 A
Ptot Total Dissipation at Tc = 25 100 W
Tstg Storage Temperature -65 to 150
Tj Max. Operating Junction Temperature 150





Description

TheBUL510ismanufacturedusinghighvoltage MultiepitaxialMesatechnologyforcost-effective highperformance.ItusesaHollowEmitter structuretoenhanceswitchingspeeds.
TheBULseries BUL510 isdesignedforuseinlighting applicationsandlowcostswitch-modepower supplies.




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