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BUL57A

Features: *Multi-Cbase for efficient energy distributio across the chip resulting in significantly improved switching and energy ratings across full temperature range.*Ion implant and high accuracy masking for tight control of characteristics from batch to batch.*Triple Guard Rings for improved co...

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SeekIC No. : 004304539 Detail

BUL57A: Features: *Multi-Cbase for efficient energy distributio across the chip resulting in significantly improved switching and energy ratings across full temperature range.*Ion implant and high accuracy ...

BUL57A Data Sheet

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Part Number:
BUL57A
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/24

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Product Details

Description



Features:

*Multi-Cbase for efficient energy distributio across the chip resulting in significantly improved switching and energy ratings across full temperature range.
*Ion implant and high accuracy masking for tight control of characteristics from batch to batch.
*Triple Guard Rings for improved control of high voltages.


Specifications

 VCBO  Collector-Base Voltage(IE=0)  200V
 VCEO  Collector-Emitter Voltage(IB=0)  70V
 VEBO  Emitter-Base Voltage(IC=0)  10V
 IC  Continuous Collector Current  22A
 IC(PK)  Peak Collector Current  32A
 IB  Base Current  6A
 Ptot  Total Dissipation at Tcase=25  80W
 Tstg  Operating and Storage Temperature Range  -55 to +150



Description

The BUL57A features are as follows:

*SEMEFAB DESIGNED AND DIFFUSED DIE
*HIGH VOLTAGE
*FAST SWITCHING
*HIGH ENERGY RATING




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