Features: *Multi-Cbase for efficient energy distributio across the chip resulting in significantly improved switching and energy ratings across full temperature range.*Ion implant and high accuracy masking for tight control of characteristics from batch to batch.*Triple Guard Rings for improved co...
BUL53BSMD: Features: *Multi-Cbase for efficient energy distributio across the chip resulting in significantly improved switching and energy ratings across full temperature range.*Ion implant and high accuracy ...
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VCBO | Collector -Base Voltag | 500V |
VCEO | Collector -Emitter Voltage ( IB= 0) | 250V |
VEBO | Emitter -Base Voltage (IC = 0) C |
10V |
IC | Collector Current | 12A |
IC(PK) | Peak Collector Current | 20A |
IB | Base Current | 3A |
PD | Power Dissipation | 60W |
R? | Thermal Impedance (when mounted on thermally conducting PCB) | 3.0/W |
Tj | Maximum Junction Temperature | 200 |
Tstg | Storage Temperature Range | -55 to +200! |