Features: Multi-Cbase for efficient energy distributio across the chip resulting in significantly improved switching and energy ratings across full temperature range.Ion implant and high accuracy masking for tight control of characteristics from batch to batch.Triple Guard Rings for improved contr...
BUL53A: Features: Multi-Cbase for efficient energy distributio across the chip resulting in significantly improved switching and energy ratings across full temperature range.Ion implant and high accuracy ma...
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VCBO | Collector-Base Voltage(IE=0) | 600V |
VCEO | Collector-Emitter Voltage(IB=0) | 300V |
VEBO | Emitter-Base Voltage(IC=0) | 10V |
IC | Continuous Collector Current | 10A |
IC(PK) | Peak Collector Current | 18A |
IB | Base Current | 3A |
Ptot | Total Dissipation at Tcase=25 | 90W |
Tstg | Operating and Storage Temperature Range | -55 to +150 |
The BUL53A features are as follows:
SEMEFAB DESIGNED AND DIFFUSED DIE
HIGH VOLTAGE
FAST SWITCHING
HIGH ENERGY RATING