Transistors Bipolar (BJT) 8A 400V 125W NPN
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Transistor Polarity : | NPN | Collector- Emitter Voltage VCEO Max : | 400 V |
Emitter- Base Voltage VEBO : | 9 V | Maximum DC Collector Current : | 8 A |
DC Collector/Base Gain hfe Min : | 10 | Configuration : | Single |
Maximum Operating Frequency : | 14 MHz | Maximum Operating Temperature : | + 150 C |
Mounting Style : | Through Hole | Package / Case : | TO-220AB |
Packaging : | Tube |
Rating | Symbol | BUL147 | BUL147F | Unit |
Collector-Emitter Sustaining Voltage | VCEO | 400 | Vdc | |
Collector-Emitter Breakdown Voltage | VCES | 700 | Vdc | |
Emitter-Base Voltage | VEBO | 9.0 | Vdc | |
Collector Current-Continuous -Peak(1) |
IC ICM |
8.0 16 |
Adc | |
Base Current-Continuous -Peak(1) |
IB IBM |
4.0 |
Adc | |
RMS Isolated Voltage(2) (for 1 sec, R.H.<30%, TC=25) Test No.1 Per Fig.22a Test No.2 Per Fig22b Test No.3 Per Fig.220c |
VISOL |
- -
|
3500 1500
|
Volts |
Total Device Dissipation |
PD | 125 1.0 |
45 0.36 |
Watts |
Operating an Storage Temperature | TJ, Tstg | - 65 to 150 |