Features: Vertical power TrenchMOSLow on-state resistanceCMOS logic compatibleVery low quiescent currentOvertemperature protectionLoad current limitingLatched overload and short circuit protectionOvervoltage and undervoltage shutdown with hysteresisOff-state open circuit load detectionDiagnostic s...
BUK218-50DY: Features: Vertical power TrenchMOSLow on-state resistanceCMOS logic compatibleVery low quiescent currentOvertemperature protectionLoad current limitingLatched overload and short circuit protectionOv...
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Features: *Vertical power DMOS switch*Low on-state resistance*5 V logic compatible input with hyst...
Features: *Vertical power DMOS switch*Low on-state resistance*5 V logic compatible input with hyst...
Features: *Vertical power DMOS switch*Low on-state resistance*5 V logic compatible input with hyst...
SYMBOL | PARAMETER | CONDITIONS | MIN. | MAX. | UNIT |
VBG | Continuous supply voltage | 0 | 50 | V | |
IL | Continuous load current per channel | Tmb135 | - | 8 | A |
PD | Total power dissipation | Tmb25 | - | 83.3 | W |
Tstg | Storage reperature | -55 | 175 | ||
Tj | Continuous junction temperature1 | -40 | 150 | ||
Reverse battery voltages2 | |||||
VGB | Continuous reverse voltage | - | 16 | V | |
VGB | Peak reverse voltage | - | 32 | V | |
Application information | |||||
RI, RS | Extemal resistors3 | to linit input, status currents | 3.2 | - | k |
Input and status currents | |||||
II | Continuous input current | -5 | 5 | mA | |
IS | Continuous status current | -5 | 5 | mA | |
II | Repetitive peak input current | 0.1, tp=300s | -50 | 50 | mA |
IS | Repetitive peak status current | 0.1, tp=300s | -50 | 50 | mA |
Inductive load clamping | VBG=13V, IL=8A | ||||
EBL | Non-repetitive clamping energy(one channnel) | Tj=150 prior to turn-off | - | 150 | mJ |
Monolithic dual channel high side protected power switch in TOPFET2 BUK218-50DY technology assembled in a 7 pin plastic surface mount package.