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BUH51G

Transistors Bipolar (BJT) 3A 800V 50W NPN

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SeekIC No. : 00210230 Detail

BUH51G: Transistors Bipolar (BJT) 3A 800V 50W NPN

BUH51G Data Sheet

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Part Number:
BUH51G
Mfg:
ON Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Quick Details

Transistor Polarity : NPN Collector- Emitter Voltage VCEO Max : 500 V
Emitter- Base Voltage VEBO : 10 V Maximum DC Collector Current : 3 A
DC Collector/Base Gain hfe Min : 8 Configuration : Single
Maximum Operating Frequency : 23 MHz (Min) Maximum Operating Temperature : + 150 C
Mounting Style : Through Hole Package / Case : TO-225
Packaging : Bulk    

Description

Transistor Polarity : NPN
Configuration : Single
Maximum Operating Temperature : + 150 C
Mounting Style : Through Hole
DC Collector/Base Gain hfe Min : 8
Maximum DC Collector Current : 3 A
Emitter- Base Voltage VEBO : 10 V
Packaging : Bulk
Package / Case : TO-225
Collector- Emitter Voltage VCEO Max : 500 V
Maximum Operating Frequency : 23 MHz (Min)


Parameters:

Technical/Catalog InformationBUH51G
VendorON Semiconductor
CategoryDiscrete Semiconductor Products
Transistor TypeNPN
Voltage - Collector Emitter Breakdown (Max)500V
Current - Collector (Ic) (Max)3A
Power - Max50W
DC Current Gain (hFE) (Min) @ Ic, Vce8 @ 1A, 1V
Vce Saturation (Max) @ Ib, Ic1.1V @ 200mA, 1A
Frequency - Transition-
Current - Collector Cutoff (Max)100A
Mounting TypeThrough Hole
Package / CaseTO-225-3
PackagingBulk
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names BUH51G
BUH51G



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