Transistors Bipolar (BJT) 3A 800V 50W NPN
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Transistor Polarity : | NPN | Collector- Emitter Voltage VCEO Max : | 500 V |
Emitter- Base Voltage VEBO : | 10 V | Maximum DC Collector Current : | 3 A |
DC Collector/Base Gain hfe Min : | 8 | Configuration : | Single |
Maximum Operating Frequency : | 23 MHz (Min) | Maximum Operating Temperature : | + 150 C |
Mounting Style : | Through Hole | Package / Case : | TO-225 |
Packaging : | Bulk |
Technical/Catalog Information | BUH51G |
Vendor | ON Semiconductor |
Category | Discrete Semiconductor Products |
Transistor Type | NPN |
Voltage - Collector Emitter Breakdown (Max) | 500V |
Current - Collector (Ic) (Max) | 3A |
Power - Max | 50W |
DC Current Gain (hFE) (Min) @ Ic, Vce | 8 @ 1A, 1V |
Vce Saturation (Max) @ Ib, Ic | 1.1V @ 200mA, 1A |
Frequency - Transition | - |
Current - Collector Cutoff (Max) | 100A |
Mounting Type | Through Hole |
Package / Case | TO-225-3 |
Packaging | Bulk |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | BUH51G BUH51G |