BUH51

Transistor Polarity : NPN
Configuration : Single
Maximum Operating Temperature : + 150 C
Mounting Style : Through Hole
DC Collector/Base Gain hfe Min : 8
Maximum DC Collector Current : 3 A
Emitter- Base Voltage VEBO : 10 V
Packaging : Bulk
Package / Case : TO-225
Collector- Emitter Voltage VCEO Max : 500 V
Maximum Operating Frequency : 23 MHz (Min)


Features:

• Improved Efficiency Due to the Low Base Drive Requirements:
- High and Flat DC Current Gain hFE
- Fast Switching
• Robustness Thanks to the Technology Developed to Manufacture this Device
• Motorola "6 SIGMA" Philosophy Providing Tight and Reproducible Parametric Distributions


Specifications

Rating	Symbol	Value	Unit
CollectorEmitter Sustaining Voltage	VCEO	500	Vdc
CollectorBase Breakdown Voltage	VCBO	800	Vdc
CollectorEmitter Breakdown Voltage	VCES	800	Vdc
EmitterBase Voltage	VEBO	10	Vdc
Collector Current - Continuous                   - Peak (1)	IC ICM	3 8	Adc
Base Current - Continuous              - Peak (1)	IB IBM	2 4	Adc
*Total Device Dissipation @ TC = 25 *Derate above 25°C	PD	50 0.4	Watt W/
Operating and Storage Temperature	TJ, Tstg	65 to 150

Description

The BUH51 has an application specific stateofart die designed for use in 50 Watts Halogen electronic transformers.

This power transistor BUH51 is specifically designed to sustain the large inrush current during either the startup conditions or under a short circuit across the load.


Parameters:

Technical/Catalog Information	BUH51
Vendor	ON Semiconductor
Category	Discrete Semiconductor Products
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	500V
Current - Collector (Ic) (Max)	3A
Power - Max	50W
DC Current Gain (hFE) (Min) @ Ic, Vce	8 @ 1A, 1V
Vce Saturation (Max) @ Ib, Ic	1.1V @ 200mA, 1A
Frequency - Transition	-
Current - Collector Cutoff (Max)	100A
Mounting Type	Through Hole
Package / Case	TO-225-3
Packaging	Bulk
Lead Free Status	Contains Lead
RoHS Status	RoHS Non-Compliant
Other Names	BUH51 BUH51