BUD44D2

Features:

• Low Base Drive Requirement
• High Peak DC Current Gain (55 Typical) @ I_C = 100 mA
• Extremely Low Storage Time Min/Max Guarantees Due to the
   H2BIP Structure which Minimizes the Spread
• Integrated CollectorEmitter Free Wheeling Diode
• Fully Characterized and Guaranteed Dynamic V_CE(sat)
• "6 Sigma" Process Providing Tight and Reproductible Parameter Spreads
It's characteristics make it also suitable for PFC application

Specifications

Rating	Symbol	Value	Unit
Collector-Emitter Sustaining Voltage	VCEO	400	Vdc
Collector-Base Breakdown Voltage	VCBO	700	Vdc
Collector-Emitter Breakdown Voltage	VCES	700	Vdc
Emitter-Base Voltage	VEBO	12	Vdc
Collector Current-Continuous                           -Peak(1)	IC ICM	2 5	Adc
Base Current-Continuous                     -Peak(1)	IB IBM	1 2	Adc
*Total Device Dissipation @ TC=25 *Derate above 25	PD	25 0.2	Watt W/
Operating and Storage Temperature	TJ,Tstg	-65 to 150

Description

The BUD44D2 is stateofart High Speed High gain BIPolar transistor (H2BIP). High dynamic characteristics and lot to lot minimum spread (±150 ns on storage time) make it ideally suitable for light ballast applications. Therefore, there is no need to guarantee an h_FE window.