Transistors Bipolar (BJT) 4A 650V 25W NPN
BUD42D-1G: Transistors Bipolar (BJT) 4A 650V 25W NPN
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Transistor Polarity : | NPN | Collector- Emitter Voltage VCEO Max : | 350 V | ||
Emitter- Base Voltage VEBO : | 9 V | Maximum DC Collector Current : | 4 A | ||
DC Collector/Base Gain hfe Min : | 8 | Configuration : | Single | ||
Maximum Operating Temperature : | + 150 C | Mounting Style : | SMD/SMT | ||
Package / Case : | IPAK | Packaging : | Tube |
Technical/Catalog Information | BUD42D-1G |
Vendor | ON Semiconductor |
Category | Discrete Semiconductor Products |
Transistor Type | NPN |
Voltage - Collector Emitter Breakdown (Max) | 350V |
Current - Collector (Ic) (Max) | 4A |
Power - Max | 25W |
DC Current Gain (hFE) (Min) @ Ic, Vce | 8 @ 1A, 2V |
Vce Saturation (Max) @ Ib, Ic | 200mV @ 500mA, 2A |
Frequency - Transition | - |
Current - Collector Cutoff (Max) | 100A |
Mounting Type | Surface Mount |
Package / Case | DPak, SC-63, TO-252 (2 leads+tab) |
Packaging | Tube |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | BUD42D 1G BUD42D1G |