BU808DFX

The BU808DFX is a kind of high voltage fast-switching NPN power darlington transistor in monolithic Darlington configuration which is manufactured using Multiepitaxial Mesa technology for cost-effective high performance.

The features of BU808DFX can be summarized as (1)STMicroelectronics preferred salestype; (2)NPN monolithic darlington with integrated free-wheeling diode; (3)high voltage capability (> 1400 V); (4)high dc current gain (typ. 150); (5)fully insulated package (u.l. compliant) for easy mounting; (6)low base-drive requirements; (7)dedicated application note AN1184.

The absolute maximum ratings of BU808DFX are (1)VCBO collector-base voltage (IE = 0): 1400 V; (2)VCEO collector-emitter voltage (IB = 0): 700 V; (3)VEBO emitter-base voltage (IC = 0): 5 V; (4)IC collector current: 8 A; (5)ICM collector peak current (tp < 5 ms): 10 A; (6)IB base current: 3 A; (7)IBM base peak current (tp < 5 ms): 6 A; (8)Ptot total dissipation at Tc = 25°C: 62 W; (9)Visol insulation withstand voltage (RMS) from all three leads to exernal heatsink : 2500 V; (10)Tstg storage temperature: -65 to 150°C; (11)Tj Max. operating junction temperature: 150°C.