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BU4S11

Features: 1) Low current dissipation.2) Super-mini mold package designed for surface mounting.3) Wide range of operating power supply voltage.4) Capable of driving two L-TTL inputs and one LS-TTL input directlySpecifications Parameter Symbol Limits Unit Power supply voltage VDD VSS 0...

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SeekIC No. : 004303886 Detail

BU4S11: Features: 1) Low current dissipation.2) Super-mini mold package designed for surface mounting.3) Wide range of operating power supply voltage.4) Capable of driving two L-TTL inputs and one LS-TTL in...

BU4S11 Data Sheet

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Part Number:
BU4S11
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/21

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Product Details

Description



Features:

1) Low current dissipation.
2) Super-mini mold package designed for surface mounting.
3) Wide range of operating power supply voltage.
4) Capable of driving two L-TTL inputs and one LS-TTL input directly


Specifications

 Parameter  Symbol  Limits  Unit
 Power supply voltage  VDD  VSS 0.3 ~ VSS + 18  V
 Power dissipation  Pd  170  mW
 Input current  IIN   10  mA
 Operating temperature  Topr    40 ~ + 85  
 Storage temperature  Tstg    55 ~ + 150  
 Input voltage  VIN  VSS 0.3 ~ VDD + 0.3  V

1 These values indicate the limits at which voltage can be applied to the terminal without causing destruction, but operation is not guaranteed at these values.
2 Power dissipation is reduced by 1.7mW for each increase in Ta of 1°C over 25°C.


Description

The BU4S11 is a dual-input positive logic NAND gate. This is an ultra-compact logic IC with one circuit of the BU4011B built into an SMP package.


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