BU4S01G2

Features of the BU4S01G2 are:(1)low power consumption;(2)wide operating power supply range (3V to 16V).Sturcture of the BU4S01G2 is silicon monolithic integrated circuit.

The absolute maximum ratings of the BU4S01G2 can be summarized as:(1):the parameter is power supply voltage,the symbol is VDD,the rating is VSS-0.3 to VSS+18,the unit is V;(2):the parameter is power dissipation,the symbol is Pd,the rating is 540,the unit is mW;(3):the parameter is supply current,the symbol is lin,the rating is ±10,the unit is mA;(4):the parameter is operating temperature,the symbol is Topr,the rating is -40 to +85,the unit is ;(5):the parameter is storage temperature,the symbol is Tstg,the rating is -55 to +150,the unit is ;(6):the parameter is input voltage,the symbol is Vin,the rating is Vss-0.3 to VDD+0.3,the unit is V;(7):the parameter is maximum junction temperature,the symbol is Tjmax,the rating is 150,the unit is .

The recommended operating conditions of the BU4S01G2 can be summarized as:(1):the parameter is power supply voltage,the symbol is VDD,the limit is +3.0 to +16.0,the unit is V;(2):the parameter is input voltage,the symbol is VIN,the limit is 0 to VDD,the unit is V.