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BU2722DF

PinoutSpecifications SYMBOL PARAMETER CONDTIONS MIN. MAX. UNIT VCESMVCEOICICMIBIBM-IB(AV)IBMPtotTstgTj Collector to emitter voltageCollector to emitter voltage (open base) Collector current (DC)Collector current peak valueBase current (DC)Base current peak valueReverse base c...

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BU2722DF: PinoutSpecifications SYMBOL PARAMETER CONDTIONS MIN. MAX. UNIT VCESMVCEOICICMIBIBM-IB(AV)IBMPtotTstgTj Collector to emitter voltageCollector to emitter voltage (open base) Coll...

BU2722DF Data Sheet

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Part Number:
BU2722DF
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/21

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Product Details

Description



Pinout

Connection Diagram


Specifications

SYMBOL PARAMETER CONDTIONS
MIN.
MAX.
UNIT

VCESM
VCEO
IC
ICM
IB
IBM
-IB(AV)
IBM
Ptot
Tstg
Tj

 Collector to emitter voltage
Collector to emitter voltage (open base)
Collector current (DC)
Collector current peak value
Base current (DC)
Base current peak value
Reverse base current
Reverse base current peak value1
Total power dissipation
Storage temperature
Junction temperature		 VBE=0V
average over any 20 ms period
Ths25
-
-
-
-
-
-
-
-
-
-65
-
1700
825
10
25
10
20
150
20
45
150
150
V
V
A
A
A
A
mA
A
W




Description

New generation, high-voltage, high-speed switching npn transistor BU2722DF with integrated damper diode in a plastic full-pack envelope. Intended for use in horizontal deflection circuits of high resolution monitors. Suitable for operation up to 64 kHz, designed to withstand VCES pulses up to 1700 V.


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