BTS781GP

Features:

• Quad D-MOS switch
• Free configurable as bridge or quad-switch
• Optimized for DC motor management applications
• Low R_{DS ON}: 26 m high-side switch, 14 m low-side switch (typical values @ 25 °C)
• Maximum peak current: typ. 42 A @ 25 °C
• Very low quiescent current: typ. 4 A @ 25 °C
• Small outline, thermal optimized PowerPak
• Load and GND-short-circuit-protection
• Operates up to 40 V
• Status flag for over temperature
• Open load detection in Off-mode
• Overtemperature shut down with hysteresis
• Internal clamp diodes
• Isolated sources for external current sensing
• Under-voltage detection with hysteresis


Pinout




Specifications

40 °C < Tj < 150 °C

Parameter	Symbol	Limit Values		Unit	Remarks
		min.	max.
High-Side-Switches (Pins DHVS, IH1,2 and SH1,2)
Supply voltage	VS	0.3	42	V
Supply voltage for full short circuit protection	VS(SCP)		28	V
HS-drain current	IS	10	*	A	TC = 125°C; DC
HS-input current	IIH	5	5	mA	Pin IH1 and IH2
HS-input voltage	VIH	10	16	V	Pin IH1 and IH2

Note: * internally limited


Description

The BTS 781 GP is part of the TrilithIC family containing three dies in one package: One double high-side switch and two low-side switches. The drains of these three vertical DMOS chips are mounted on separated leadframes. The sources are connected to individual pins, so the BTS 781 GP can be used in H-bridge- as well as in any other configuration. The double high-side is manufactured in SMART SIPMOS^® technology which combines low RDS ON vertical DMOS power stages with CMOS control circuit. The high-side switch is fully protected and contains the control and diagnosis circuit. To achieve low RDS ON and fast switching performance, the low-side switches are manufactured in S-FET 2 logic level technology. The equivalent standard product is the SPD30N06S2L-13.