BTS710L1 Selling Leads, Price trend, BTS710L1 DataSheet download, circuit diagram from SeekIC.com

Features: · Overload protection· Current limitation· Short-circuit protection· Thermal shutdown· Overvoltage protection (including load dump)· Reverse battery protection1)· Undervoltage and overvoltage shutdown with auto-restart and hysteresis· Open drain diagnostic output· Open load detection in ...

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SeekIC No. : 004303086 Detail

BTS710L1: Features: · Overload protection· Current limitation· Short-circuit protection· Thermal shutdown· Overvoltage protection (including load dump)· Reverse battery protection1)· Undervoltage and overvolt...

BTS710L1 Data Sheet

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Part Number:: BTS710L1
Supply Ability:: 5000

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Qty
1~5000

Unit Price
Negotiable

Processing time
15 Days

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Upload time: 2024/12/21

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Recent History
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Product Details

Description

Features:

· Overload protection
· Current limitation
· Short-circuit protection
· Thermal shutdown
· Overvoltage protection (including load dump)
· Reverse battery protection1)
· Undervoltage and overvoltage shutdown with auto-restart and hysteresis
· Open drain diagnostic output
· Open load detection in ON-state
· CMOS compatible input
· Loss of ground and loss of Vbb protection
· Electrostatic discharge (ESD) protection

Application

· mC compatible power switch with diagnostic feedback for 12 V DC grounded loads
· Most suitable for resistive and lamp loads
· Replaces electromechanical relays and discrete circuits

Pinout

Connection Diagram

Specifications

Parameter	Symbol	Values	Unit
Supply voltage (overvoltage protection see page 4)	V_bb	43	V
Supply voltage for full short circuit protection T_j,start =-40 ...+150°C	V_bb	24	V
Load current (Short-circuit current, see page 5)	I_L	self-limited	A
Load dump protection²⁾ V_LoadDump = U_A + V_s, U_A = 13.5 V R_I³⁾ = 2 , t_d = 200 ms; IN= low or high, each channel loaded with R_L = 7.1,	V_{Load dump}⁴⁾	60	V
Operating temperature range Storage temperature range	T_j T_stg	-40 ...+150 -55 ...+150	°C
Power dissipation (DC)⁵ T_a= 25°C: (all channels active) T_a = 85°C:	P_tot	3.6 1.9	W
Electrostatic discharge capability (ESD) (Human Body Model)	V_ESD	1.0	kV
Input voltage (DC) Current through input pin (DC) Current through status pin (DC) see internal circuit diagram page 8	V_IN I_IN I_ST	-10 ... +16 ±2.0 ±5.0	V mA
Thermal resistance junction - soldering point^5),6) each channel: junction - ambient⁵⁾ one channel active: all channels active:	R_thjs R_thja	15 41 34	K/W

Description

N channel vertical power FET BTS710L1 with charge pump, ground referenced CMOS compatible input and diagnostic feedback, monolithically integrated in Smart SIPMOSâ technology. Fully protected by embedded protection functions.

BTS710L1

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