BTS712N1

Crosstalk :
Bandwidth :
On Time (Max) :
Off Time (Max) :
Switch Voltage (Max) :
Operating Supply Voltage :
Number of Switches :
Switch Configuration :
Mounting Style : SMD/SMT
Maximum Operating Temperature : + 150 C
Package / Case : DSO-20
On Resistance (Max) : 0.165 Ohms


Features:

• Overload protection
• Current limitation
• Short-circuit protection
• Thermal shutdown
• Overvoltage protection (including load dump)
• Fast demagnetization of inductive loads
• Reverse battery protection1)
• Undervoltage and overvoltage shutdown with auto-restart and hysteresis
• Open drain diagnostic output
• Open load detection in OFF-state
• CMOS compatible input
• Loss of ground and loss of Vbb protection
• Electrostatic discharge (ESD) protection


Application

• C compatible power switch with diagnostic feedback for 12 V and 24 V DC grounded loads
• All types of resistive, inductive and capacitive loads
• Replaces electromechanical relays and discrete circuits


Pinout




Specifications

Parameter	Symbol	Values	Unit
Supply voltage (overvoltage protection see page 4)	Vbb	43	V
Supply voltage for full short circuit protection Tj,start =-40 ...+150°C	Vbb	34	V
Load current (Short-circuit current, see page 5)	IL	self-limited	A
Load dump protection2) VLoadDump = UA + Vs, UA = 13.5 V RI3) = 2 , td = 200 ms; IN= low or high, each channel loaded with RL = 7.1,	VLoad dump4)	60	V
Operating temperature range Storage temperature range	Tj Tstg	-40 ...+150 -55 ...+150	°C
Power dissipation (DC)5                         Ta = 25°C: (all channels active)                           Ta = 85°C:	Ptot	3.6 1.9	W
Inductive load switch-off energy dissipation, single pulse Vbb =12V, Tj,start =150°C5), IL = 1.9 A, ZL = 66 mH, 0                    one channel: IL = 2.8 A, ZL = 66 mH, 0          two parallel channels: IL = 4.4 A, ZL = 66 mH, 0         four parallel channels: see diagrams on page 9 and page 10	EAS	150 320 800	mJ
Electrostatic discharge capability (ESD) (Human Body Model)	VESD	1.0	kV
Input voltage (DC) Current through input pin (DC) Current through status pin (DC) see internal circuit diagram page 9	VIN IIN IST	-10 ... +16 ±2.0 ±5.0	V mA
Thermal resistance junction - soldering point5),6)             each channel: junction - ambient5)                  one channel active:                                      all channels active:	Rthjs Rthja	16 44 35	K/W

Description

N channel vertical power FET BTS712N1 with charge pump, ground referenced CMOS compatible input and diagnostic feedback, monolithically integrated in Smart SIPMOS® technology. Providing embedded protective functions.


Parameters:

Technical/Catalog Information	BTS712N1
Vendor	Infineon Technologies
Category	Integrated Circuits (ICs)
Package / Case	DSO-20
Mounting Type	Surface Mount
Type	High Side
Voltage - Supply	5 V ~ 34 V
On-State Resistance	165 mOhm
Current - Output / Channel	1.9A
Current - Peak Output	7.5A
Packaging	Tape & Reel (TR)
Input Type	Non-Inverting
Number of Outputs	4
Operating Temperature	-40°C ~ 150°C
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	BTS712N1 BTS712N1