BTS770G

Features:

• Quad switch driver
• Free configurable as bridge or quad-switch
• Optimized for DC motor management applications
• Ultra low R_DSON @ 25 °C:
    High-side switch: typ.165 m,
    Low-side switch: typ. 55 m
• Very high peak current capability
• Very low quiescent current
• Space- and thermal optimized power P-DSO-Package
• Load and GND-short-circuit-protected
• Operates up to 40 V
• Status flag diagnosis
• Overtemperature shut down with hysteresis
• Short-circuit detection and diagnosis
• Open-load detection and diagnosis
• C-MOS compatible inputs
• Internal clamp diodes
• Isolated sources for external current sensing
• Over- and under-voltage detection with hysteresis


Pinout




Specifications

Parameter	Symbol	Limit Values		Unit	Remarks
		min.	max.
High-Side-Switches (Pins DHVS, GH1,2 and SH1,2)
Supply voltage	VS	0.3	43	V
HS-drain current	IDHS	8	*	A	* internally limited
HS-input current	IGH	2	2	mA	Pin GH1 and GH2
HS-input voltage	VGH	10	16	V	Pin GH1 and GH2
Status Output ST
Status Output current	IST	5	5	mA	Pin ST
Low-Side-Switches (Pins DL1,2, GL1,2 and SL1,2)
Break-down voltage	V(BR)DSS	50		V	VGS = 0 V; ID <= 1 mA
LS-drain current	IDLS		10	A
LS-drain current	IDLS		20	A	t < 1 ms; n < 0.1
LS-drain current	IDLS		30	A	t < 0.1 ms; n < 0.1
lS-input voltage	VGL	10	14	V	Pin GL1 and GL2
Temperatures
Junction temperature	Tj	40	150	°C
Storage temperature	Tstg	50	150	°C
Thermal Resistances (one HS-LS-Path active)
LS-junction case	RthjCLS		20	K/W	measured to pin3 or 12
HS-junction case	RthjCHS		20	K/W	measured to pin19
Junction ambient	Rthja		60	K/W

Note: Maximum ratings are absolute ratings; exceeding any one of these values may cause irreversible damage to the integrated circuit.


Description

The BTS 770 G is a TrilithIC contains one double high-side switch and two low-side switches in one P-DSO-28-9 -Package. "Silicon instead of heatsink" becomes true

The ultra low R_DSON of this device avoids powerdissipation. BTS770G saves costs in mechanical construction and mounting and increases the efficiency.

The high-side switches are produced in the SIEMENS SMART SIPMOS® technology. BTS770G is fully protected and contains the signal conditioning circuitry for diagnosis. (The comparable standard high-side product is the BTS 611L1.)

For minimized R_DSON the two low-side switches of BTS770G are produced in the SIEMENS Millifet logic level technology (The comparable standard product is the BUZ 101AL).

Each drain of these three chips is mounted on separated leadframes (see P-DSO-28-9 pin configuration). The sources of all four power transistors BTS770G are connected to separate pins.

So the BTS 770 G can be used in H-Bridge configuration as well as in any other switch configuration.

Moreover, BTS770G is possible to add current sense resistors.

All these features of BTS770G open a broad range of automotive and industrial applications.