BTS737S3

Power Switch ICs - POE / LAN PROFET SMART 2 CH Hi Side Pwr SW

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BTS737S3 Picture
SeekIC No. : 00629048 Detail

BTS737S3: Power Switch ICs - POE / LAN PROFET SMART 2 CH Hi Side Pwr SW

floor Price/Ceiling Price

US $ 3.46~4.12 / Piece | Get Latest Price
Part Number:
BTS737S3
Mfg:
Infineon Technologies
Supply Ability:
5000

Price Break

  • Qty
  • 0~646
  • 646~1000
  • 1000~2000
  • Unit Price
  • $4.12
  • $3.59
  • $3.46
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
View more price & deliveries
Total Cost: $ 0.00

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Upload time: 2024/11/13

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Product Details

Quick Details

On Resistance (Max) : 0.035 Ohms Maximum Operating Temperature : + 150 C
Mounting Style : SMD/SMT Package / Case : PDSO-28-16    

Description

Crosstalk :
Bandwidth :
On Time (Max) :
Off Time (Max) :
Switch Voltage (Max) :
Operating Supply Voltage :
Number of Switches :
Switch Configuration :
Mounting Style : SMD/SMT
On Resistance (Max) : 0.035 Ohms
Maximum Operating Temperature : + 150 C
Package / Case : PDSO-28-16


Application

• µC compatible high-side power switch with diagnostic feedback for 12V and 24V grounded loads
• All types of resistive and capacitve loads
• Most suitable for loads with high inrush currents, so as lamps
• Replaces electromechanical relays, fuses and discrete circuits





Pinout

  Connection Diagram




Specifications

Parameter Parameter Values Unit
Supply voltage (overvoltage protection see page 6) Vbb
40
V
Supply voltage for full short circuit protection1)
Tj,start =-40 ...+150°C
Vbb
36
V
Load current (Short-circuit current, see page 6) IL
IL(lim)2
Load dump protection3) VLoadDump = VA + Vs, VA = 13.5 V
RI4) = 2, td = 400 ms; IN = low or high,
each channel loaded with RL = 4.7 ,
VLoaddump5)
60
V
Operating temperature range
Storage temperature range
Tj
Tstg
Tj
Tstg
Power dissipation (DC)6) Ta = 25°C:
(all channels active) Ta = 85°C:
Ptot
3.7
1.9
W
Maximal switchable inductance, single pulse
Vbb =12V, Tj,start =150°C6),
IL = 4.0 A, EAS = 0.8J, 0 one channel:
IL = 6.0 A, EAS = 1.0J, 0 two parallel channels:
IL = 9.5 A, EAS = 1.5J, 0 four parallel channels:
see diagrams on page 10
ZL
33
37
64
mH
Electrostatic discharge capability (ESD) IN:
(Human Body Model) IS:
out to all other pins shorted:
acc. MIL-STD883D, method 3015.7 and ESD assn. std. S5.1-1993
R=1.5k; C=100pF
VESD
1.0
4.0
8.0
kV
Input voltage (DC)
Current through input pin (DC)
Current through sense pin (DC)
see internal circuit diagram page 9
VIN
IIN
IIS
-10 ... +16
±0.3
±0.3
V
mA





Description

The BTS737S3 feayures are as follows:
• N channel vertical power MOSFET with charge pump, ground referenced CMOS compatible input and diagnostic feedback, monolithically integrated in Smart SIPMOS®technology.
• Providing embedded protective functions

The BTS737S3 is a N channel vertical power MOSFET with charge pump, ground referenced CMOS compatible input and diagnostic feedback, monolithically integrated in Smart SIPMOS technology.It is designed for (1)C compatible high-side power switch with diagnostic feedback for 12V and 24V grounded loads; (2)all types of resistive and capacitve loads; (3)most suitable for loads with high inrush currents, so as lamps; (4)replaces electromechanical relays, fuses and discrete circuits.

Features of the BTS737S3 are:(1)short circuit protection; (2)overload protection; (3)current limitation; (4)thermal shutdown; (5)reverse battery protection with external resistor; (6)overvoltage protection with external resistor (incl. load dump); (7)loss of ground protection; (8)electrostatic discharge protection (ESD).For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Representatives worldwide (see address list).Integrated protection functions are designed to prevent IC destruction under fault conditions described in the data sheet. Fault conditions are considered as "outside" normal operating range. Protection functions are not designed for continuous repetitive operation.

The absolute maximum ratings of the BTS737S3 can be summarized as:(1)supply voltage:40V;(2)storage temperature range:-55 to 150;(3)operating temperature range:-40 to 150;(4)power dissipation:3.7W;(6)supply voltage for full short circuit protection:36V.Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body,or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.

At present there is not too much information about this model.If you are willing to find more about BTS737S3, please pay attention to our web! We will promptly update the relevant information.






Parameters:

Technical/Catalog InformationBTS737S3
VendorInfineon Technologies
CategoryIntegrated Circuits (ICs)
Package / CaseDSO-20
Mounting TypeSurface Mount
TypeHigh Side
Voltage - Supply5 V ~ 40 V
On-State Resistance30 mOhm
Current - Output / Channel5.4A
Current - Peak Output45A
PackagingTape & Reel (TR)
Input TypeNon-Inverting
Number of Outputs4
Operating Temperature-40°C ~ 150°C
Lead Free StatusContains Lead
RoHS StatusRoHS Non-Compliant
Other Names BTS737S3
BTS737S3



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