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BTS725L1

Features: · Overload protection· Current limitation· Short-circuit protection· Thermal shutdown· Overvoltage protection (including load dump)· Reverse battery protection1)· Undervoltage and overvoltage shutdown with auto-restart and hysteresis· Open drain diagnostic output· Open load detection in ...

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SeekIC No. : 004303088 Detail

BTS725L1: Features: · Overload protection· Current limitation· Short-circuit protection· Thermal shutdown· Overvoltage protection (including load dump)· Reverse battery protection1)· Undervoltage and overvolt...

BTS725L1 Data Sheet

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Part Number:
BTS725L1
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/9/27

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Product Details

Description



Features:

· Overload protection
· Current limitation
· Short-circuit protection
· Thermal shutdown
· Overvoltage protection (including load dump)
· Reverse battery protection1)
· Undervoltage and overvoltage shutdown with auto-restart and hysteresis
· Open drain diagnostic output
· Open load detection in ON-state
· CMOS compatible input
· Loss of ground and loss of Vbb protection
· Electrostatic discharge (ESD) protection


Application

·


Specifications

Parameter Symbol Values Unit
Supply voltage (overvoltage protection see page 4) Vbb
43
V
Supply voltage for full short circuit protection
Tj,start =-40 ...+150°C		 Vbb

24

V

Load current (Short-circuit current, see page 5) IL self-limited A
Load dump protection2) VLoadDump = UA + Vs, UA = 13.5V
RI3)= 2,td= 200 ms, IN= low or high
each channel loaded with RL = 3.4,		 VLoaddump4)
60
V
Operating temperature range
Storage temperature range		 Tj
Tstg
-40 ...+150
-55 ...+150
°C
Power dissipation (DC)5                       Ta = 25°C:
(all channels active)                         Ta = 85°C:		 Ptot
3.7
1.9
W
Electrostatic discharge capability (ESD)
(Human Body Model)		 VESD
1.0
kV
Input voltage (DC)
Current through input pin (DC)
Current through status pin (DC)
see internal circuit diagram page 8		 VIN
IIN
IST

-10...+16
±2.0
±5.0

mA

Thermal resistance
junction - soldering point5),6)             each channel:
junction - ambient5)                 one channel active:
                                   all channels active:		 Rthjs
Rthja
12
41
34
K/W



Description

N channel vertical power FET BTS725L1 with charge pump, ground referenced CMOS compatible input and diagnostic feedback, monolithically integrated in Smart SIPMOS® technology. Fully protected by embedded protection functions.


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