BTS723GW

Power Switch ICs - POE / LAN SMART HI SIDE PWR SWITCH 2 CHANNELS

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BTS723GW Picture
SeekIC No. : 00628956 Detail

BTS723GW: Power Switch ICs - POE / LAN SMART HI SIDE PWR SWITCH 2 CHANNELS

floor Price/Ceiling Price

US $ 2.14~3.67 / Piece | Get Latest Price
Part Number:
BTS723GW
Mfg:
Infineon Technologies
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~10
  • 10~100
  • 100~500
  • Unit Price
  • $3.67
  • $3.29
  • $2.68
  • $2.14
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/11/4

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Product Details

Quick Details

On Resistance (Max) : 0.09 Ohms On Time (Max) : 55 us
Off Time (Max) : 95 us Operating Supply Voltage : 7 V to 58 V
Maximum Operating Temperature : + 105 C Mounting Style : SMD/SMT
Package / Case : DSO-14    

Description

Crosstalk :
Bandwidth :
Number of Switches :
Switch Configuration :
Switch Voltage (Max) :
Mounting Style : SMD/SMT
Maximum Operating Temperature : + 105 C
On Resistance (Max) : 0.09 Ohms
On Time (Max) : 55 us
Off Time (Max) : 95 us
Operating Supply Voltage : 7 V to 58 V
Package / Case : DSO-14


Application

• µC compatible high-side power switch with diagnostic feedback for 12V and 24V and42V grounded loads
• All types of resistive, inductive and capacitive loads
• Most suitable for inductive loads
• Replaces electromechanical relays, fuses and discrete circuits





Pinout

  Connection Diagram




Specifications

Parameter Symbol Values Unit
Supply voltage (overvoltage protection see page 6) Vbb
58
V
Supply voltage for full short circuit protection
Tj,start =-40 ...+150°C
Vbb

50

V

Output Voltage to Vbb VON

70

V

Negative voltage slope at output -dVOUT/dt

20

V/s

Load current (Short-circuit current, see page 7) IL

IL(LIM)1)

A

Load dump protection2) VLoadDump = VA + Vs, VA = 27 V
RI3)= 8,td= 200 ms, IN= low or high
each channel loaded with RL = 20,
VLoaddump4)
70
V
Operating temperature range
Storage temperature range
Tj
Tstg
-40 ...+150
-55 ...+150
°C
Power dissipation (DC)5) Ta = 25°C:
(all channels active) Ta = 85°C:
Ptot
3.0
1.6
W
Maximal switchable inductance, single pulse
Vbb =12V, Tj,start =150°C5),
IL = 2.5A, EAS = 110 mJ, 0 one channel:
IL = 3.5A, EAS = 278 mJ, 0 two parallel channels:
ZL

23.0
30.0

mH

Electrostatic discharge capability (ESD)
(Human Body Model)acc. MIL-STD883D, method 3015.7 and ESD assn. std. S5.1-1993 R=1.5k; C=100pF
VESD
1.0
kV
Input voltage (DC) VIN

±42

V

Current through input pin (DC)
Current through status pin (DC)
IIN
IST

±2.0
±2.0

mA

Status pull up voltage VSPU
±42
V





Description

The BTS723GW is designed as one kind of smart high-side power switch. The general description of this device are:(1)N channel vertical power MOSFET with charge pump, ground referenced CMOS compatible input and diagnostic feedback, monolithically integrated in Smart SIPMOS 80V technology.; (3)Providing embedded protective functions; (4)An array of resistors is integrated in order to reduce the external components.

The BTS723GW can be used in (1)uC compatible high-side power switch with diagnostic feedback for 12V and 24V and 42V grounded loads; (2)all types of resistive, inductive and capacitive loads; (3)most suitable for inductive loads; (4)replaces electromechanical relays, fuses and discrete circuits. And the basic functions of it are:(1)CMOS compatible input; (2)improved electromagnetic compatibility (EMC); (3)fast demagnetization of inductive loads; (4)stable behaviour at undervoltage; (5)wide operating voltage range; (6)logic ground independent from load ground; (7)optimized inverscurrent capability.

The absolute maximum ratings of the BTS723GW can be summarized as:(1)supply voltage:58 V;(2)supply voltage for full short circuit protection:50 V;(3)output voltage to Vbb:70 V;(4)negative voltage slope at output:20 V/s;(5)load current:IL(LIM) A;(6)operating temperature range:-40 to +150;(7)storage temperature range:-55 to +150;(8)power dissipation (DC):3.0 W;(9)status pull up voltage:±42 V. If you want to know more information such as the electrical characteristics about the BTS723GW, please download the datasheet in www.seekic.com or www.chinaicmart.com .



The BTS723GW features are as follows:
• N channel vertical power MOSFET with charge pump, ground referenced CMOS compatible input and diagnostic feedback, monolithically integrated in Smart SIPMOS® 80V technology.
• Providing embedded protective functions
• An array of resistors is integrated in order to reduce the external components




Parameters:

Technical/Catalog InformationBTS723GW
VendorInfineon Technologies
CategoryIntegrated Circuits (ICs)
Package / CaseDSO-14
Mounting TypeSurface Mount
TypeHigh Side
Voltage - Supply7 V ~ 58 V
On-State Resistance90 mOhm
Current - Output / Channel2.9A
Current - Peak Output9A
PackagingTape & Reel (TR)
Input TypeNon-Inverting
Number of Outputs2
Operating Temperature-40°C ~ 150°C
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names BTS723GW
BTS723GW



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