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BTS132

Features: N channel Logic level Enhancement modeTemperature sensor with thyristor characteristicThe drain pin is electrically shorted to the tabSpecifications Parameter Symbol Values Unit Drain-source voltage VDS 60 V Drain-gate voltage, RGS = 20 k VDGR 60 Gate-source peak vo...

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BTS132: Features: N channel Logic level Enhancement modeTemperature sensor with thyristor characteristicThe drain pin is electrically shorted to the tabSpecifications Parameter Symbol Values Unit ...

BTS132 Data Sheet

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Part Number:
BTS132
Supply Ability:
5000

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Upload time: 2024/9/27

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Product Details

Description



Features:

 N channel
Logic level
Enhancement mode
Temperature sensor with thyristor characteristic
The drain pin is electrically shorted to the tab




Specifications

Parameter Symbol Values Unit
Drain-source voltage VDS 60 V
Drain-gate voltage, RGS = 20 k VDGR 60
Gate-source peak voltage, aperiodic Vgs ± 20
Gate-source voltage VGS ± 10
Continuous drain current, TC = 25 °C ID 24 A
ISO drain current
TC = 85 °C, VGS = 10 V, VDS = 0.5 V		 ID-ISO 6.0
Pulsed drain current, TC = 25 °C ID puls 96
Short circuit current, Tj = 55 ... + 150 °C ISC 80
Short circuit dissipation, Tj = 55 ... + 150 °C PSCmax 1200 W
Power dissipation Ptot 75
Operating and storage temperature range Tj, Tstg 55 ... + 150 °C
DIN humidity category, DIN 40 040 E
IEC climatic category, DIN IEC 68-1 55/150/56
Thermal resistance
Chip-case
Chip-ambient		 Rth JC
Rth JA		 1.67
75		 K/W



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