Power Switch ICs - POE / LAN N-Channel 100V TEMPFET
BTS110: Power Switch ICs - POE / LAN N-Channel 100V TEMPFET
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Maximum Operating Temperature : | + 150 C | Mounting Style : | Through Hole |
Package / Case : | TO-220AB |
Parameter | Symbol | Values | Unit |
Drain-source voltage | VDS | 100 | V |
Drain-gate voltage, RGS = 20 k | VDGR | 100 | |
Gate-source voltage | VGS | ± 20 | |
Continuous drain current, TC = 25 °C | ID | 10 | A |
ISO drain current TC = 85 °C, VGS = 10 V, VDS = 0.5 V |
ID-ISO | 1.75 | |
Pulsed drain current, TC = 25 °C | ID puls | 40 | |
Short circuit current, Tj = 55 ... + 150 °C | ISC | 37 | |
Short circuit dissipation, Tj = 55 ... + 150 °C | PSCmax | 500 | W |
Power dissipation | Ptot | 40 | |
Operating and storage temperature range | Tj, Tstg | 55 ... + 150 | °C |
DIN humidity category, DIN 40 040 | E | ||
IEC climatic category, DIN IEC 68-1 | 55/150/56 | ||
Thermal resistance Chip-case Chip-ambient |
Rth JC Rth JA |
3.1 75 |
K/W |
Technical/Catalog Information | BTS110 |
Vendor | Infineon Technologies |
Category | Discrete Semiconductor Products |
Mounting Type | Through Hole |
FET Polarity | N-Channel |
Drain to Source Voltage (Vdss) | 100V |
Current - Continuous Drain (Id) @ 25° C | 10A |
Rds On (Max) @ Id, Vgs | 200 mOhm @ 5A, 10V |
Input Capacitance (Ciss) @ Vds | 600pF @ 25V |
Power - Max | 40W |
Packaging | Tape & Reel (TR) |
Gate Charge (Qg) @ Vgs | - |
Package / Case | TO-220 |
FET Feature | Standard |
Drawing Number | * |
Lead Free Status | Contains Lead |
RoHS Status | RoHS Non-Compliant |
Other Names | BTS110 BTS110 |