BTS117

Power Switch ICs - POE / LAN SMART LOW SIDE PWR SWITCH

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BTS117 Picture
SeekIC No. : 00629189 Detail

BTS117: Power Switch ICs - POE / LAN SMART LOW SIDE PWR SWITCH

floor Price/Ceiling Price

Part Number:
BTS117
Mfg:
Infineon Technologies
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/9/27

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Product Details

Quick Details

On Resistance (Max) : 0.09 Ohms Maximum Operating Temperature : + 150 C
Mounting Style : Through Hole Package / Case : TO-220AB-3    

Description

Crosstalk :
Bandwidth :
On Time (Max) :
Off Time (Max) :
Switch Voltage (Max) :
Operating Supply Voltage :
Number of Switches :
Switch Configuration :
Mounting Style : Through Hole
On Resistance (Max) : 0.09 Ohms
Maximum Operating Temperature : + 150 C
Package / Case : TO-220AB-3


Features:

• Logic Level Input
• Input Protection (ESD)
• Thermal shutdown with latch
• Overload protection
• Short circuit protection
• Overvoltage protection
• Current limitation
• Status feedback with external input resistor
• Analog driving possible



Application

• All kinds of resistive, inductive and capacitive loads in switching or linear applications
• C compatible power switch for 12 V and 24 V DC applications
• Replaces electromechanical relays and discrete circuits



Specifications

 Parameter  Symbol  Value  Unit
 Drain source voltage  VDS  60  V
 Drain source voltage for short circuit protection  VDS(SC)  32
 Continuous input current 1)
-0.2V VIN 10V
VIN < -0.2V or VIN > 10V
 IIN  no limit
| IIN | 2
 mA
 Operating temperature  Tj  - 40 ... +150  
 Storage temperature  Tstg  - 55 ... +150  
 Power dissipation
TC = 25
 Ptot  50  W
 Unclamped single pulse inductive energy
ID(ISO) = 3.5 A
 EAS  1000  mJ
 Electrostatic discharge voltage (Human Body Model)
according to MIL STD 883D, method 3015.7 and
EOS/ESD assn. standard S5.1 - 1993
 VESD  3000  V

 Load dump protection VLoadDump2) = VA + VS
VIN=low or high; VA=13.5 V
td = 400 ms, RI = 2 Ω, ID=0,5*3.5A
td = 400 ms, RI = 2 Ω, ID= 3.5A

VLD   75
70
 DIN humidity category, DIN 40 040    E  
 IEC climatic category; DIN IEC 68-1    40/150/56  



Description

N channel vertical power FET BTS117 in Smart SIPMOS® chip on chip technology. Fully protected by embedded protected functions.


Parameters:

Technical/Catalog InformationBTS117
VendorInfineon Technologies
CategoryIntegrated Circuits (ICs)
Package / CaseTO-220-3 (Straight Leads)
Mounting TypeThrough Hole
TypeLow Side
Voltage - Supply2.2 V ~ 10 V
On-State Resistance80 mOhm
Current - Output / Channel3.5A
Current - Peak Output25A
PackagingTube
Input TypeNon-Inverting
Number of Outputs1
Operating Temperature-40°C ~ 150°C
Drawing Number*
Lead Free StatusContains Lead
RoHS StatusRoHS Non-Compliant
Other Names BTS117
BTS117
BTS117IN ND
BTS117INND
BTS117IN



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