PinoutSpecifications SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VDRM, VRRMIT(AV)IT(RMS)ITSMI2tdIT/dtIGMVGMVRGMPGMPG(AV)TstgTj Repetitive peak off-state voltagesAverage on-state currentRMS on-state currentNon-repetitive peak on-state currentI2t for fusingRepetitive rate of rise ...
BT300: PinoutSpecifications SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VDRM, VRRMIT(AV)IT(RMS)ITSMI2tdIT/dtIGMVGMVRGMPGMPG(AV)TstgTj Repetitive peak off-state voltagesAverage on-state c...
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SYMBOL | PARAMETER | CONDITIONS |
MIN. |
MAX. |
UNIT | ||
VDRM, VRRM IT(AV) IT(RMS) ITSM I2t dIT/dt IGM VGM VRGM PGM PG(AV) Tstg Tj |
Repetitive peak off-state voltages Average on-state current RMS on-state current Non-repetitive peak on-state current I2t for fusing Repetitive rate of rise of on-state current after triggering Peak gate current Peak gate voltage Peak reverse gate voltage Peak gate power Average gate power Storage temperature Operating junction temperature |
half sine wave; Tmb 111 °C all conduction angles half sine wave; Tj = 25 °C prior to surge t = 10 ms t = 8.3 ms t = 10 ms ITM = 10 A; IG = 50 mA; dIG/dt = 50 mA/s over any 20 ms period |
- |
-500R 5001 |
-600R 6001 |
-800R 800 |
V A A A A A2S A/S A V V W W |
5 8 65 71 21 50 2 5 5 5 0.5 150 125 |