BT258X-500R

On-State RMS Current (It RMS) :
Maximum Gate Peak Inverse Voltage : 5 V
Forward Voltage Drop : 1.6 V
Gate Trigger Voltage (Vgt) : 1.5 V
Mounting Style : SMD/SMT
Gate Trigger Current (Igt) : 0.2 mA
Off-State Leakage Current @ VDRM IDRM : 0.5 mA
Holding Current (Ih Max) : 6 mA
Rated Repetitive Off-State Voltage VDRM : 500 V
Breakover Current IBO Max : 82 A
Package / Case : SOT-186A
Packaging : Rail


Features:






Specifications






Description

The BT258X-500R is designed as passivated, sensitive gate thyristors BT258X-500R in a full pack, plastic envelope, intended for use in general purpose switching and phase control applications. These devices are intended to be interfaced directly to microcontrollers, logic integrated circuits and other low power gate trigger circuits.

Some limiting values have been concluded into several points of BT258X-500R as follow. The first one is about its repetitive peak off-state voltage which would be 500V. The second one is about its average on-state current which would be 5A. The third one is about its RMS on-state current which would be 8A. The fourth one is about its non-repetitive peak on-state current which would be 75A at t=10ms and would be 82A at t=8.3ms. The fifth one is about its I2t for fusing at t=10ms which would be max 28 A2s. The sixth one is about its repetitive rate of rise of on-state current after triggering which would be 50 A/s. The seventh one is about its peak gate current which would be max 2A. The eighth one is about its peak gate voltage which would be max 5V. The ninth one is about its peak reverse gate voltage which would be max 5V. The tenth one is about its peak gate power which would be max 5W. The eleventh one is about its average gate power which would be 0.5W over any 20ms period. The twelfth one is about its storage temperature which would be from -40 to 150°C. The thirteenth one is about its operating junction temperature which would be max 125°C.

Also some static characteristics about BT258X-500R. The first one is about its holding current which would be typ 0.3mA and max 6mA. The second one is about its on-state voltage which would be typ 1.3V and max 1.6V. The third one is about BT258X-500R  gate trigger voltage which would be typ 0.4V and max 1.5V with condition of Vd=12V and It=0.1A and would be min 0.1V and typ 0.2V with condition of Vd=Vrrm and It=0.1A and Tj=110°C. The fourth one is about BT258X-500R off-state leakage current which would be typ 0.1mA and max 0.5mA. And so on. For more information please contact us.