BT258-500R

SCRs RAIL SCR

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BT258-500R Picture
SeekIC No. : 00199099 Detail

BT258-500R: SCRs RAIL SCR

floor Price/Ceiling Price

Part Number:
BT258-500R
Mfg:
NXP Semiconductors
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/5

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Product Details

Quick Details

Breakover Current IBO Max : 82 A Rated Repetitive Off-State Voltage VDRM : 500 V
Off-State Leakage Current @ VDRM IDRM : 0.5 mA Forward Voltage Drop : 1.6 V
Gate Trigger Voltage (Vgt) : 1.5 V Maximum Gate Peak Inverse Voltage : 5 V
Gate Trigger Current (Igt) : 0.2 mA Holding Current (Ih Max) : 6 mA
Mounting Style : SMD/SMT Package / Case : SOT-78
Packaging : Rail    

Description

On-State RMS Current (It RMS) :
Maximum Gate Peak Inverse Voltage : 5 V
Forward Voltage Drop : 1.6 V
Gate Trigger Voltage (Vgt) : 1.5 V
Mounting Style : SMD/SMT
Gate Trigger Current (Igt) : 0.2 mA
Off-State Leakage Current @ VDRM IDRM : 0.5 mA
Holding Current (Ih Max) : 6 mA
Rated Repetitive Off-State Voltage VDRM : 500 V
Breakover Current IBO Max : 82 A
Package / Case : SOT-78
Packaging : Rail


Features:






Specifications






Description

The BT258-500R is designed as passivated, sensitive gate thyristors BT258-500R in a plastic envelope, intended for use in general purpose switching and phase control applications. These devices are intended to be interfaced directly to microcontrollers, logic integrated circuits and other low power gate trigger circuits.

Some limiting values have been concluded into several points of BT258-500R as follow. The first one is about its repetitive peak off-state voltage which would be 500V. The second one is about its average on-state current which would be 5A. The third one is about its RMS on-state current which would be 8A. The fourth one is about its non-repetitive peak on-state current which would be 75A at t=10ms and would be 82A at t=8.3ms. The fifth one is about its I2t for fusing at t=10ms which would be max 28 A2s. The sixth one is about its repetitive rate of rise of on-state current after triggering which would be 50 A/s. The seventh one is about its peak gate current which would be max 2A. The eighth one is about its peak gate voltage which would be max 5V. The ninth one is about its peak reverse gate voltage which would be max 5V. The tenth one is about its peak gate power which would be max 5W. The eleventh one is about its average gate power which would be 0.5W over any 20ms period. The twelfth one is about its storage temperature which would be from -40 to 150°C. The thirteenth one is about its operating junction temperature which would be max 125°C.

Also some static characteristics about BT258-500R. The first one is about its holding current which would be typ 0.3mA and max 6mA. The second one is about BT258-500R on-state voltage which would be typ 1.3V and max 1.6V. The third one is about BT258-500R gate trigger voltage which would be typ 0.4V and max 1.5V with condition of Vd=12V and It=0.1A and would be min 0.1V and typ 0.2V with condition of Vd=Vrrm and It=0.1A and Tj=110°C. The fourth one is about its off-state leakage current which would be typ 0.1mA and max 0.5mA. And so on. For more information please contact us.






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