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BT258S-800R

PinoutSpecifications SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VDRM,VRRMIT(AV)IT(RMS)ITSMI2tdIT/dtIGMVGMPGMPG(AV)TstgTj Repetitive peak off-state voltagesAverage on-state currentRMS on-state currentNon-repetitive peakon-state currentI2t for fusingRepetitive rate of rise of...

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BT258S-800R: PinoutSpecifications SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VDRM,VRRMIT(AV)IT(RMS)ITSMI2tdIT/dtIGMVGMPGMPG(AV)TstgTj Repetitive peak off-state voltagesAverage on-state cu...

BT258S-800R Data Sheet

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Part Number:
BT258S-800R
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Pinout

Connection Diagram


Specifications

SYMBOL PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

VDRM,VRRM
IT(AV)
IT(RMS)
ITSM
I2t
dIT/dt
IGM
VGM
PGM
PG(AV)
Tstg
Tj

 Repetitive peak off-state voltages
Average on-state current
RMS on-state current
Non-repetitive peak
on-state current
I2t for fusing
Repetitive rate of rise of
on-state current after
triggering
Peak gate current
Peak gate voltage
Peak gate power
Average gate power
Storage temperature
Operating junction temperature		 full sine wave; Tmb 111 °C
full sine wave; Tj = 25 °C prior to surge
t = 10 ms
t = 8.3 ms
t = 10 ms
ITM = 10 A; IG = 50 A;
dIG/dt = 50 A/ms
                              T2+ G+
                              T2+ G-
                              T2- G-
                              T2- G+
over any 20 ms period

-
-
-
-
-
-
-
-
-
-
-
-
-
-40
-

800
5
8
75
82
28
50
2
5
5
0.5
150
1251

V
A
A
A
A2s
A/s
A
V
W
W




Description

Passivated,sensitivegatethyristor BT258S-800R in a plastic envelope, suitable for surfacemounting,intendedforusein general purpose switching and phase control applications. BT258S-800R are intended to be interfaced directly to microcontrollers, logic integrated circuits and other low power gate trigger circuits.


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