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PinoutSpecifications SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VDRM Repetitive peak off-state voltages - -400R4501 -600R6501 -800R800 V IT(AV) Average on-state current half sine wave;Tlead 83 °C - 13 A IT(RMS) RMS on-state curren...

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BT152X: PinoutSpecifications SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VDRM Repetitive peak off-state voltages - -400R4501 -600R6501 -800R800 V IT(AV) Ave...

BT152X Data Sheet

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Part Number:: BT152X
Supply Ability:: 5000

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Upload time: 2024/11/20

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Connection Diagram

Specifications

SYMBOL	PARAMETER	CONDITIONS	MIN.	MAX.			UNIT
V_DRM	Repetitive peak off-state voltages		-	-400R 450¹	-600R 650¹	-800R 800	V
I_T(AV)	Average on-state current	half sine wave;T_lead 83 °C	-	13			A
I_T(RMS)	RMS on-state current	all conduction angles	-	20			A
I_TSM	Non-repetitive peak on-state current	half sine wave; T_j = 25 °C prior to surge t = 10 ms t = 8.3 ms	- -	200 220			A A
I²t	I2t for fusing	t = 10 ms	-	200			A²s
dI_T/dt	Repetitive rate of rise of on-state current after triggering	I_TM = 2 A; I_G = 10 mA;	-	200			A/s
I_GM	Peak gate current	dIG/dt = 0.2A/s	-	5			A
V_GM	Peak gate voltage		-	5			V
V_RGM	Peak reverse gate voltage		-	5			V
P_GM	Peak gate power		-	20			W
P_G(AV)	Average gate power	over any 20 ms period	-	0.5			W
T_stg	Storage temperature		-40	150			°C
T_j	Operating junction temperature		-	125			°C

1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the thyristor may
switch to the on-state. The rate of rise of current should not exceed 15 A/s.

Description

Glass passivated thyristors BT152X in a full pack, plastic envelope, intended for use in applications requiring high bidirectional blocking voltage capability and high thermal cycling performance. Typical applications include motor control, industrial and domestic lighting, heating and static switching.

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BT152X

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