PinoutSpecifications SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VDRM Repetitive peak off-state voltages - -500R5001 -600R6001 -800R800 V IT(AV) Average on-state current half sine wave;Tlead 113 °C - 2.5 A IT(RMS) RMS on-state curr...
BT150: PinoutSpecifications SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VDRM Repetitive peak off-state voltages - -500R5001 -600R6001 -800R800 V IT(AV) Ave...
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SYMBOL |
PARAMETER |
CONDITIONS |
MIN. |
MAX. |
UNIT | ||
VDRM |
Repetitive peak off-state voltages |
- |
-500R 5001 |
-600R 6001 |
-800R 800 |
V | |
IT(AV) |
Average on-state current | half sine wave;Tlead 113 °C |
- |
2.5 |
A | ||
IT(RMS) |
RMS on-state current | all conduction angles |
- |
4 |
A | ||
ITSM |
Non-repetitive peak on-state current |
half sine wave; Tj = 25 °C prior to surge t = 10 ms t = 8.3 ms |
- - |
35 38 |
A A | ||
I2t |
I2t for fusing | t = 10 ms |
- |
6.1 |
A2s | ||
dIT/dt |
Repetitive rate of rise of on-state current after triggering | ITM = 2 A; IG = 10 mA; |
- |
50 |
A/s | ||
IGM |
Peak gate current | dIG/dt = 50mA/s |
- |
2 |
A | ||
VGM |
Peak gate voltage |
- |
5 |
V | |||
VRGM |
Peak reverse gate voltage |
- |
5 |
V | |||
PGM |
Peak gate power |
- |
5 |
W | |||
PG(AV) |
Average gate power | over any 20 ms period |
- |
0.5 |
W | ||
Tstg |
Storage temperature |
-40 |
150 |
°C | |||
Tj |
Operating junction temperature |
- |
1252 |
°C |
Glass passivated, sensitive gate thyristors BT150 in a plastic envelope,intended for use in general purpose switching and phase control applications. These devices are intended to be interfaced directly to microcontrollers, logic integrated circuits and other low power gate trigger circuits.