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BT150

PinoutSpecifications SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VDRM Repetitive peak off-state voltages - -500R5001 -600R6001 -800R800 V IT(AV) Average on-state current half sine wave;Tlead 113 °C - 2.5 A IT(RMS) RMS on-state curr...

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BT150: PinoutSpecifications SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VDRM Repetitive peak off-state voltages - -500R5001 -600R6001 -800R800 V IT(AV) Ave...

BT150 Data Sheet

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Part Number:
BT150
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Pinout

Connection Diagram




Specifications

SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VDRM
 Repetitive peak off-state voltages  
-
-500R
5001
-600R
6001
-800R
800
V
IT(AV)
 Average on-state current half sine wave;Tlead 113 °C
-
2.5
A
IT(RMS)
 RMS on-state current all conduction angles
-
4
A
ITSM
 Non-repetitive peak
on-state current		 half sine wave; Tj = 25 °C prior to surge
t = 10 ms
t = 8.3 ms
-
-
35
38
A
A
I2t
 I2t for fusing t = 10 ms
-
6.1
A2s
dIT/dt
 Repetitive rate of rise of on-state current after triggering ITM = 2 A; IG = 10 mA;
-
50
A/s
IGM
 Peak gate current dIG/dt = 50mA/s
-
2
A
VGM
 Peak gate voltage  
-
5
V
VRGM
 Peak reverse gate voltage  
-
5
V
PGM
 Peak gate power  
-
5
W
PG(AV)
 Average gate power over any 20 ms period
-
0.5
W
Tstg
 Storage temperature  
-40
150
°C
Tj
 Operating junction temperature  
-
1252
°C
1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the thyristor may
switch to the on-state. The rate of rise of current should not exceed 15 A/s.
2 Note: Operation above 110°C may require the use of a gate to cathode resistor of 1k or less.


Description

Glass passivated, sensitive gate thyristors BT150  in a plastic envelope,intended for use in general purpose switching and phase control applications. These devices are intended to be interfaced directly to microcontrollers, logic integrated circuits and other low power gate trigger circuits.




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