Features: · High thermal cycling performance · Isolated mounting base.· High bidirectional blocking voltage apabilityApplication·Motor control ·Industrial and domestic lighting, heating and static switching.PinoutSpecifications Symbol Parameter Conditions Min Max Unit VDRM, VRRM ...
BT151X: Features: · High thermal cycling performance · Isolated mounting base.· High bidirectional blocking voltage apabilityApplication·Motor control ·Industrial and domestic lighting, heating and static s...
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Symbol | Parameter | Conditions | Min |
Max |
Unit |
VDRM, VRRM | repetitive peak off-state voltage | ||||
BT151X-500 | [1] | - |
500 |
V | |
BT151X-650 | [1] | - |
650 |
V | |
BT151X-800 | - |
800 |
V | ||
IT(AV) | average on-state current | half sinewave; Ths 69 °C; Figure 1 |
- |
7.5 |
A |
IT(RMS) | non-repetitive peak on-state current | half sinewave; Tj = 25 °C prior to surge; Figure 2 and Figure 3 |
- |
12 |
A |
t = 10 ms | - |
120 |
A | ||
t = 8.3 ms | - |
132 |
A | ||
I2t | I2t for fusing | t = 10 ms | - |
72 |
A2s |
dIT/dt | repetitive rate of rise of on-state current after triggering |
ITM = 20 A; IG = 50 mA; dIG/dt 50 mA/s |
- |
50 |
A/s |
IGM | peak gate current | - |
2 |
A | |
VRGM | peak reverse gate voltage | - |
5 |
V | |
PGM | peak gate power | - |
5 |
W | |
PG(AV) | average gate power | over any 20 ms period | - |
0.5 |
W |
Tstg | storage temperature | -40 |
+150 |
||
Tj | junction temperature | - |
125 |