PinoutSpecifications SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VDRM,VDRM Repetitive peak off-state voltages - -500 500 -600600 -800800 V IT(AV) Average on-state current half sine wave; Ths 103 ˚C - 7.5 A IT(RMS) RMS on-state current all conduction angles...
BT151S-800R: PinoutSpecifications SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VDRM,VDRM Repetitive peak off-state voltages - -500 500 -600600 -800800 V IT(AV) Average on-state current ...
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SYMBOL | PARAMETER | CONDITIONS | MIN. | MAX. | UNIT | ||
VDRM,VDRM | Repetitive peak off-state voltages | - | -500 500 |
-600 600 |
-800 800 |
V | |
IT(AV) | Average on-state current | half sine wave; Ths 103 ˚C | - | 7.5 | A | ||
IT(RMS) | RMS on-state current | all conduction angles | - | 12 | A | ||
ITSM | Non-repetitive peak on-state current | full sine wave; Tj = 25 ˚C prior to surge t = 10 ms t = 8.3 ms |
- - |
100 110 |
A A | ||
I2t | I2t for fusing | t = 10 ms | - | 50 | A2s | ||
dIT/dt | Repetitive rate of rise of on-state current after triggering | ITM = 20 A; IG = 50 mA; dIG/dt =50 mA/µs |
- |
50 | A/µs | ||
IGM | Peak gate current | over any 20 ms period | - | 2 | A | ||
VGM | Peak gate voltage | - | 5 | V | |||
PGM | Peak gate power | - | 5 | W | |||
PG(AV) | Average gate power | - | 0.5 | W | |||
Tstg | Storage temperature | -40 | 150 | ˚C | |||
Tj | Operating junction temperature | - | 125 | ˚C |
Glasspassivated thyristors BT151S-800R ina plastic envelope, suitable for surface mounting, intended for use in applications requiring high bidirectional blocking voltage capability and high thermal cycling performance. Typical applications of v include motor control, industrial and domestic lighting, heating and static switching.