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PinoutSpecifications SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VDRM,VDRM Repetitive peak off-state voltages - -500 500 -600600 -800800 V IT(AV) Average on-state current half sine wave; Ths 103 ˚C - 7.5 A IT(RMS) RMS on-state current all conduction angles...

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SeekIC No. : 004302581 Detail

BT151S-650R: PinoutSpecifications SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VDRM,VDRM Repetitive peak off-state voltages - -500 500 -600600 -800800 V IT(AV) Average on-state current ...

BT151S-650R Data Sheet

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Part Number:: BT151S-650R
Supply Ability:: 5000

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Upload time: 2024/11/20

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Pinout

Connection Diagram

Specifications

SYMBOL	PARAMETER	CONDITIONS	MIN.	MAX.			UNIT
V_DRM,V_DRM	Repetitive peak off-state voltages		-	-500 500	-600 600	-800 800	V
I_T(AV)	Average on-state current	half sine wave; T_hs 103 ˚C	-	7.5			A
I_T(RMS)	RMS on-state current	all conduction angles	-	12			A
IT_SM	Non-repetitive peak on-state current	full sine wave; T_j= 25 ˚C prior to surge t = 10 ms t = 8.3 ms	- -	100 110			A A
I²t	I²t for fusing	t = 10 ms	-	50			A²s
dI_T/dt	Repetitive rate of rise of on-state current after triggering	I_TM = 20 A; I_G = 50 mA; dI_G/dt =50 mA/µs	-	50			A/µs
I_GM	Peak gate current	over any 20 ms period	-	2			A
V_GM	Peak gate voltage		-	5			V
P_GM	Peak gate power		-	5			W
P_G(AV)	Average gate power		-	0.5			W
T_stg	Storage temperature		-40	150			˚C
T_j	Operating junction temperature		-	125			˚C

Description

Glasspassivated thyristors BT151S-650R ina plastic envelope, suitable for surface mounting, intended for use in applications requiring high bidirectional blocking voltage capability and high thermal cycling performance. Typical applications include motor control, industrial and domestic lighting, heating and static switching.

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BT151S-650R

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