PinoutSpecifications SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VDRM,VDRM Repetitive peak off-state voltages - -500 500 -600600 -800800 V IT(AV) Average on-state current half sine wave; Ths 103 ˚C - 7.5 A IT(RMS) RMS on-state current all conduction angles...
BT151S-500R: PinoutSpecifications SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VDRM,VDRM Repetitive peak off-state voltages - -500 500 -600600 -800800 V IT(AV) Average on-state current ...
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SYMBOL | PARAMETER | CONDITIONS | MIN. | MAX. | UNIT | ||
VDRM,VDRM | Repetitive peak off-state voltages | - | -500 500 |
-600 600 |
-800 800 |
V | |
IT(AV) | Average on-state current | half sine wave; Ths 103 ˚C | - | 7.5 | A | ||
IT(RMS) | RMS on-state current | all conduction angles | - | 12 | A | ||
ITSM | Non-repetitive peak on-state current | full sine wave; Tj = 25 ˚C prior to surge t = 10 ms t = 8.3 ms |
- - |
100 110 |
A A | ||
I2t | I2t for fusing | t = 10 ms | - | 50 | A2s | ||
dIT/dt | Repetitive rate of rise of on-state current after triggering | ITM = 20 A; IG = 50 mA; dIG/dt =50 mA/µs |
- |
50 | A/µs | ||
IGM | Peak gate current | over any 20 ms period | - | 2 | A | ||
VGM | Peak gate voltage | - | 5 | V | |||
PGM | Peak gate power | - | 5 | W | |||
PG(AV) | Average gate power | - | 0.5 | W | |||
Tstg | Storage temperature | -40 | 150 | ˚C | |||
Tj | Operating junction temperature | - | 125 | ˚C |
Glasspassivated thyristors BT151S-500R ina plastic envelope, suitable for surface mounting, intended for use in applications requiring high bidirectional blocking voltage capability and high thermal cycling performance. Typical applications include motor control, industrial and domestic lighting, heating and static switching.