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PinoutSpecifications SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VDRM,VRRMIT(AV)IT(RMS)ITSMI2tdIT/dtIGMVGMVRGMPGMPG(AV)TstgTj Repetitive peak off-state voltagesAverage on-state currentRMS on-state currentNon-repetitive peakon-state currentI2t for fusingRepetitive rate of rise of...

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BT151M: PinoutSpecifications SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VDRM,VRRMIT(AV)IT(RMS)ITSMI2tdIT/dtIGMVGMVRGMPGMPG(AV)TstgTj Repetitive peak off-state voltagesAverage on-state cu...

BT151M Data Sheet

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Part Number:: BT151M
Supply Ability:: 5000

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Upload time: 2024/11/7

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Connection Diagram

Specifications

SYMBOL	PARAMETER	CONDITIONS	MIN.	MAX.			UNIT
V_DRM,V_RRM I_T(AV)I_T(RMS) I_TSM I²t dI_T/dt I_GMV_GM V_RGM P_GM P_G(AV) T_stg T_j	Repetitive peak off-state voltages Average on-state current RMS on-state current Non-repetitive peak on-state current I2t for fusing Repetitive rate of rise of on-state current after triggering Peak gate current Peak gate voltage Peak reverse gate voltage Peak gate power Average gate power Storage temperature Operating junction temperature	half sine wave; T_mb 103 °C all conduction angles half sine wave; T_j= 25 °C prior to surge t = 10 ms t = 8.3 ms t = 10 ms I_TM = 20 A; I_G = 50 mA; dI_G/dt = 50 mA/s over any 20 ms period	- - - - - - - - - - - -40 -	-500R 500¹	-650R 650¹	-800R 800	V A A A A A²s A/s A V V W W
				7.5 12 100 110 50 50 2 5 5 5 0.5 150 125

Description

Glass passivated thyristors BT151M ina plastic envelope, suitable for surface mounting, intended for use in applications requiring high bidirectional blocking voltage capability and high thermal cycling performance. Typical applications of BT151M include motor control, industrial and domestic lighting, heating and static switching.

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BT151M

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