Specifications SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VDRM, VRRMIT(AV)IT(RMS)ITSMI2tdIT/dtIGMVGMVPGMPG(AV)TstgTj Repetitive peak off-statevoltagesAverage on-state currentRMS on-state currentNon-repetitive peakon-state currentI2t for fusingRepetitive rate of rise ofon-state curren...
BT151F: Specifications SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VDRM, VRRMIT(AV)IT(RMS)ITSMI2tdIT/dtIGMVGMVPGMPG(AV)TstgTj Repetitive peak off-statevoltagesAverage on-state currentRMS on-sta...
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SYMBOL | PARAMETER | CONDITIONS | MIN. | MAX. | UNIT | ||
VDRM, VRRM IT(AV) IT(RMS) ITSM I2t dIT/dt IGM VGM V PGM PG(AV) Tstg Tj |
Repetitive peak off-state voltages Average on-state current RMS on-state current Non-repetitive peak on-state current I2t for fusing Repetitive rate of rise of on-state current after triggering Peak gate current Peak gate voltage Peak reverse gate voltage Peak gate power Average gate power Storage temperature Operating junction temperature |
half sine wave; Ths 87 °C all conduction angles half sine wave; Tj = 125 °C prior to surge; with reapplied VDRM(max) t = 10 ms t = 8.3 ms t = 10 ms ITM = 20 A; IG = 50 mA; dIG/dt = 50 mA/ms over any 20 ms period |
- - - - - - - - - - - - -40 - |
-500 5001 |
-650 6501 |
-800 800 |
V A A A A A2s A/ms A V V W W |
5.7 9 100 110 50 50 2 5 5 5 0.5 150 125 |