BT151F

Specifications SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VDRM, VRRMIT(AV)IT(RMS)ITSMI2tdIT/dtIGMVGMVPGMPG(AV)TstgTj Repetitive peak off-statevoltagesAverage on-state currentRMS on-state currentNon-repetitive peakon-state currentI2t for fusingRepetitive rate of rise ofon-state curren...

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SeekIC No. : 004302577 Detail

BT151F: Specifications SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VDRM, VRRMIT(AV)IT(RMS)ITSMI2tdIT/dtIGMVGMVPGMPG(AV)TstgTj Repetitive peak off-statevoltagesAverage on-state currentRMS on-sta...

floor Price/Ceiling Price

Part Number:
BT151F
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/20

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Product Details

Description



Specifications

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VDRM, VRRM
IT(AV)
IT(RMS)
ITSM
I2t
dIT/dt
IGM
VGM
V
PGM
PG(AV)
Tstg
Tj
Repetitive peak off-state
voltages
Average on-state current
RMS on-state current
Non-repetitive peak
on-state current
I2t for fusing
Repetitive rate of rise of
on-state current after
triggering
Peak gate current
Peak gate voltage
Peak reverse gate voltage
Peak gate power
Average gate power
Storage temperature
Operating junction
temperature
half sine wave; Ths 87 °C
all conduction angles
half sine wave; Tj = 125 °C prior
to surge; with reapplied VDRM(max)
t = 10 ms
t = 8.3 ms
t = 10 ms
ITM = 20 A; IG = 50 mA;
dIG/dt = 50 mA/ms
over any 20 ms period
-
-
-
-
-
-
-
-
-
-
-
-
-40
-
-500
5001
-650
6501
-800
800
V
A
A
A
A
A2s
A/ms
A
V
V
W
W

5.7
9
100
110
50
50
2
5
5
5
0.5
150
125



Description

Glass passivated thyristors BT151F in a full pack, plastic envelope, intended for use in applications requiring high bidirectional blocking voltage capability and high thermal cycling performance. Typical applications of BT151F include motor control, industrial and domestic lighting, heating and static switching.



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