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PinoutSpecifications SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VDRM,VRRMIT(AV)IT(RMS)ITSMI2tdIT/dtIGMVGMVRGMPGMPG(AV)TstgTj Repetitive peak off-state voltagesAverage on-state currentRMS on-state currentNon-repetitive peakon-state currentI2t for fusingRepetitive rate of rise of...

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BT150M: PinoutSpecifications SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VDRM,VRRMIT(AV)IT(RMS)ITSMI2tdIT/dtIGMVGMVRGMPGMPG(AV)TstgTj Repetitive peak off-state voltagesAverage on-state cu...

BT150M Data Sheet

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Part Number:: BT150M
Supply Ability:: 5000

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Connection Diagram

Specifications

SYMBOL	PARAMETER	CONDITIONS	MIN.	MAX.			UNIT
V_DRM,V_RRM I_T(AV)I_T(RMS) I_TSM I²t dI_T/dt I_GMV_GM V_RGM P_GM P_G(AV) T_stg T_j	Repetitive peak off-state voltages Average on-state current RMS on-state current Non-repetitive peak on-state current I2t for fusing Repetitive rate of rise of on-state current after triggering Peak gate current Peak gate voltage Peak reverse gate voltage Peak gate power Average gate power Storage temperature Operating junction temperature	half sine wave; T_mb 111 °C all conduction angles half sine wave; T_j= 25 °C prior to surge t = 10 ms t = 8.3 ms t = 10 ms I_TM = 20 A; I_G = 50 mA; dI_G/dt = 50 mA/s over any 20 ms period	- - - - - - - - - - - -40 -	-500R 500¹	-650R 650¹	-800R 800	V A A A A A²s A/s A V V W W
				2.5 4 35 38 6.1 50 2 5 5 5 0.5 150 125²

Description

Glass passivated, sensitive gate thyristors BT150M in a plastic envelope, suitable for surface mounting, intended for use in general purpose switching and phase control applications. These devices are intended to be interfaced directly to microcontrollers, logic integrated circuits and other low power gate trigger circuits.

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BT150M

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