BT139B-800E

The BT139B-800E is designed as passivated, sensitive gate triacs in a plastic envelope suitable for surface mounting, intended for use in general purpose bidirectional switching and phase control applications, where high sensitivity is required in all four quadrants.

Some limiting values have been concluded into several points of BT139B-800E as follow. The first one is about its repetitive peak off-state voltage which would be 600V. The second one is about its RMS on-state current which would be 16A. The third one is about its non-repetitive peak on-state current which would be 140A at t=20ms and would be 150A at t=16.7ms. The fourth one is about its I2t for fusing at t=10ms which would be max 98 A2s. The fifth one is about its repetitive rate of rise of on-state current after triggering which would be 50 A/s for T2+ G+ and T2+ G- and T2- G- and would be max 10 A/s for T2- G+. The sixth one is about its peak gate current which would be max 2A. The seventh one is about its peak gate voltage which would be max 5V. The eighth one is about its peak gate power which would be max 5W. The ninth one is about its average gate power which would be 0.5W over any 20ms period. The tenth one is about its storage temperature which would be from -40 to 150°C. The eleventh one is about its operating junction temperature which would be max 125°C.

Also some static characteristics about BT139B-800E. The first one is about BT139B-800E holding current which would be typ 4mA and max 30mA. The second one is about its on-state voltage which would be typ 1.2V and max 1.6V. The third one is about its gate trigger voltage which would be typ 0.7V and max 1.5V with condition of Vd=12V and It=0.1A and would be min 0.25v and typ 0.4V with condition of Vd=400V and It=0.1A and Tj=125°C. The fourth one is about BT139B-800E off-state leakage current which would be typ 0.1mA and max 0.5mA. And so on. For more information please contact us.