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Rated Repetitive Off-State Voltage VDRM : | 600 V | Off-State Leakage Current @ VDRM IDRM : | 0.1 mA | ||
Gate Trigger Voltage (Vgt) : | 1.5 V | Gate Trigger Current (Igt) : | 25 mA | ||
Holding Current (Ih Max) : | 45 mA | Mounting Style : | Through Hole | ||
Package / Case : | TO-220AB | Packaging : | Rail |
The BT139-600E is designed as one kind of glass passivated, sensitive gate that can be used in general purpose bidirectional switching and phase control applications. The absolute maximum ratings of the BT139-600E can be summarized as:(1)Average on-state current: 7.5 A;(2)RMS on-state current: 16 A;(3)Non-repetitive peak on-state current: 98 A to 140 A;(4)Repetitive rate of rise of on-state current after triggering: 50 A/us;(5)Peak gate current: 2 A;(6)Peak gate voltage: 5 V;(7)Peak reverse gate voltage: 5 V;(8)Peak gate power: 5 W;(9)Average gate power: 0.5 W;(10)Storage temperature: -40 to 150 °C.
The electrical characteristics of the BT139-600E can be summarized as:(1)Gate trigger current: 2.5 to 10 mA;(2)Latching current: 3.2 to 30 mA;(3)Holding current: 4.0 to 30 mA;(4)On-state voltage: 1.2 to 1.6 V;(5)Off-state leakage current: 0.1 to 0.5 mA;(6)Circuit commutated turn-off time: 50 us;(7)Gate controlled turn-on time: 2 us. If you want to know more information such as the electrical characteristics about the BT139-600E, please download the datasheet in www.seekic.com or www.chinaicmart.com.