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BT137X-600D

Triacs RAIL TRIAC

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BT137X-600D: Triacs RAIL TRIAC

BT137X-600D Data Sheet

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Part Number:
BT137X-600D
Mfg:
NXP Semiconductors
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/25

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Product Details

Quick Details

Rated Repetitive Off-State Voltage VDRM : 600 V Off-State Leakage Current @ VDRM IDRM : 0.1 mA
Gate Trigger Voltage (Vgt) : 1.5 V Gate Trigger Current (Igt) : 10 mA
Holding Current (Ih Max) : 10 mA Mounting Style : SMD/SMT
Package / Case : SOT-186A Packaging : Rail    

Description

Breakover Current IBO Max :
On-State RMS Current (It RMS) :
Rated Repetitive Off-State Voltage VDRM : 600 V
Gate Trigger Current (Igt) : 10 mA
Mounting Style : SMD/SMT
Off-State Leakage Current @ VDRM IDRM : 0.1 mA
Holding Current (Ih Max) : 10 mA
Package / Case : SOT-186A
Gate Trigger Voltage (Vgt) : 1.5 V
Packaging : Rail


Specifications

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VDRM Repetitive peak off-state
voltages		 - -500
5001		 -600
6001		 V
IT(RMS) RMS on-state current full sine wave;
Ths 109 		- 8 A
ITSM Non-repetitive peak
on-state current		 full sine wave;
Tj = 25 prior to
surge
t = 20 ms
t = 16.7 ms
 -
-		 65 A
A
I2t I2t for fusing t = 10 ms - 71
21
A2s
dIT/dt Repetitive rate of rise of
on-state current after
triggering		 ITM = 12 A; IG = 0.2A;
dIG/dt = 0.2A/s		 50
50
50
10
A/s
A/s
A/s
A/s
IGM Peak gate current - 2 A
VGM Peak gate voltage - 5 V
PGM Peak gate power - 5 W
PG(AV) Average gate power over any 20 ms
period		 - 0.5 W
Tstg Storage temperature -40 150
Tj Operating junction
temperature		 - 125



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